BSS7728 반도체 회로 부품 판매점
SIPMOS Small-Signal-Transistor
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 Infineon Technologies AG |
Rev. 2.0
SIPMOS® Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
Gate
pin1
BSS7728N
Product Summary
VDS
RDS(on)
ID
60 V
5Ω
0.2 A
SOT-23
Drain
pin 3
Source
pin 2
Type
Package
BSS7728N SOT-23
Ordering Code Tape and Reel Information Marking
Q67042-S4189 E6327: 3000 pcs/reel
sSK
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA=25°C
TA=70°C
ID
Pulsed drain current
TA=25°C
Reverse diode dv/dt
ID puls
dv/dt
IS=0.2A, VDS=48V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
VGS
Ptot
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Value
0.2
0.16
0.8
6
±20
0.36
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2003-06-06
Rev. 2.0
BSS7728N
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - ambient
at minimal footprint
Symbol
Values
Unit
min. typ. max.
RthJA
- - 350 K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=250µA
Gate threshold voltage, VGS = VDS
V(BR)DSS 60
-
-V
VGS(th) 1.3 1.9 2.3
ID=26µA
Zero gate voltage drain current
VDS=60V, VGS=0, Tj=25°C
VDS=60V, VGS=0, Tj=150°C
Gate-source leakage current
VGS=20V, VDS=0
Drain-source on-state resistance
IDSS
IGSS
µA
- - 0.1
- -5
- 1 10 nA
RDS(on) - 4.3 7.5 Ω
VGS=4.5V, ID=0.05A
Drain-source on-state resistance
RDS(on) - 2.7 5
VGS=10V, ID=0.5A
Page 2
2003-06-06
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제조업체: Infineon Technologies AG
( infineon )
BSS7728 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
관련 데이터시트
BSS7728
SIPMOS Small-Signal-Transistor - Infineon Technologies AG
BSS7728N
SIPMOS Small-Signal-Transistor - Infineon Technologies AG