BSS52 반도체 회로 부품 판매점
NPN Darlington transistors
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 NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BSS50; BSS51; BSS52
NPN Darlington transistors
Product specification
Supersedes data of 1997 May 13
File under Discrete Semiconductors, SC04
1997 Sep 03
Philips Semiconductors
NPN Darlington transistors
Product specification
BSS50; BSS51; BSS52
FEATURES
• High current (max. 1 A)
• Low voltage (max. 80 V)
• Integrated diode and resistor.
APPLICATIONS
• Industrial high gain amplification.
DESCRIPTION
NPN Darlington transistor in a TO-39 metal package.
PNP complements: BSS61 and BSS62.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
base
collector, connected to case
handbook, halfpa1ge
2
3
2
3
MAM311
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
collector-base voltage
BSS50
BSS51
BSS52
VCES
collector-emitter voltage
BSS50
BSS51
BSS52
IC collector current
Ptot total power dissipation
hFE DC current gain
fT transition frequency
CONDITIONS
MIN.
open emitter
VBE = 0
Tamb ≤ 25 °C
Tcase ≤ 25 °C
IC = 500 mA; VCE = 10 V
IC = 500 mA; VCE = 5 V; f = 100 MHz
−
−
−
−
−
−
−
−
−
2 000
−
TYP.
−
−
−
−
−
−
−
−
−
−
200
MAX. UNIT
60 V
80 V
90 V
45 V
60 V
80 V
1A
0.8 W
5W
−
− MHz
1997 Sep 03
2
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제조업체: NXP Semiconductors
( nxp )
BSS52 transistor
데이터시트 다운로드 :
[ BSS52.PDF ]
[ BSS52 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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