BSS296 반도체 회로 부품 판매점
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)
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 Siemens Semiconductor Group |
BSS 296
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V
Type
BSS 296
Type
BSS 296
VDS
100 V
ID
0.8 A
Ordering Code
Q62702-S217
Pin 1
G
Pin 2
D
RDS(on)
0.8 Ω
Package
TO-92
Marking
SS 296
Tape and Reel Information
E6296
Pin 3
S
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
TA = 25 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
Vgs
ID
IDpuls
Ptot
Values
100
100
± 14
± 20
0.8
3.2
1
Unit
V
A
W
Semiconductor Group
1
12/05/1997
BSS 296
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air 1)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
Tj
Tstg
RthJA
Values
-55 ... + 150
-55 ... + 150
≤ 125
E
55 / 150 / 56
Unit
°C
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 100 V, VGS = 0 V, Tj = 25 °C
VDS = 100 V, VGS = 0 V, Tj = 125 °C
VDS = 60 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 0.8 A
VGS = 4.5 V, ID = 0.8 A
V(BR)DSS
100
VGS(th)
0.8
IDSS
-
-
-
IGSS
-
RDS(on)
-
-
-
1.4
0.1
8
-
10
0.5
0.6
-
2
1
50
100
100
0.8
1.4
Unit
V
µA
nA
nA
Ω
Semiconductor Group
2
12/05/1997
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제조업체: Siemens Semiconductor Group
( siemens )
BSS296 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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