BUV298AV 반도체 회로 부품 판매점
NPN TRANSISTOR POWER MODULE
|
|
 STMicroelectronics |
® BUV298AV
NPN TRANSISTOR POWER MODULE
s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW Rth JUNCTION CASE
s SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s INSULATED CASE (2500V RMS)
s EASY TO MOUNT
s LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
s MOTOR CONTROL
)s SMPS & UPS
lete Product(ss WELDING EQUIPMENT
Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
Product(s) - ObsoABSOLUTE MAXIMUM RATINGS
teSymbol
Parameter
leVCEV Collector-Emitter Voltage (VBE = -5 V)
soVCEO(sus) Collector-Emitter Voltage (IB = 0)
bVEBO Emitter-Base Voltage (IC = 0)
O IC Collector Current
Value
1000
450
7
50
Unit
V
V
V
A
ICM Collector Peak Current (tp = 10 ms)
75 A
IB Base Current
10 A
IBM
Ptot
Tstg
Tj
VISO
Base Peak Current (tp = 10 ms)
Total Dissipation at TC = 25 oC
Storage Temperature
Max. Operating Junction Temperature
Insulation Withstand Voltage (AC-RMS)
16
250
-55 to 150
150
2500
A
W
oC
oC
oC
October 2001
1/7
BUV298AV
THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case
Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
0.5
0.05
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICER
ICEV
Collector Cut-off
Current (RBE = 5 Ω)
Collector Cut-off
Current (VBE = -5V)
VCE = VCEV
VCE = VCEV
VCE = VCEV
VCE = VCEV
Tj = 100 oC
Tj = 100 oC
0.4 mA
2 mA
0.4 mA
2 mA
IEBO
Emitter Cut-off Current VEB = 5 V
(IC = 0)
2 mA
VCEO(sus)∗ Collector-Emitter
IC = 0.2 A L = 25 mH
450
V
Sustaining Voltage
Vclamp = 450 V
hFE∗ DC Current Gain
IC = 32 A VCE = 5 V
t(s)VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = 32 A IB = 6.4 A
IC = 32 A IB = 6.4 A Tj = 100 oC
ucVBE(sat)∗ Base-Emitter
dSaturation Voltage
IC = 32 A IB = 6.4 A
IC = 32 A IB = 6.4 A Tj = 100 oC
rodiC/dt Rate of Rise of
On-state Collector
VCC = 300 V RC = 0 tp = 3 µs
IB1 = 9.6 A Tj = 100 oC
PVCE(3 µs) Collector-Emitter
teDynamic Voltage
VCC = 300 V RC = 9.3 Ω
IB1 = 9.6 A Tj = 100 oC
leVCE(5 µs) Collector-Emitter
oDynamic Voltage
VCC = 300 V RC = 9.3 Ω
IB1 = 9.6 A Tj = 100 oC
bsts Storage Time
Otf Fall Time
) -tc Cross-over Time
IC = 32 A VCC = 50 V
VBB = -5 V RBB = 0.39 Ω
Vclamp = 450 V IB1 = 6.4 A
L = 78 µH Tj = 100 oC
t(sVCEW Maximum Collector
ICWoff = 48 A IB1 = 6.4 A
Emitter Voltage
VBB = -5 V VCC = 50 V
ucWithout Snubber
L = 52 µH RBB = 0.39 Ω
Tj = 125 oC
Obsolete Prod∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
12
0.35
0.6
1.2
2
V
V
1 1.5
0.9 1.5
V
V
160 210
A/µs
4.5 8
V
2.5 4
V
2.2
0.2
0.45
4.5
0.4
0.7
µs
µs
µs
450 V
2/7
|
PDF 파일 내의 페이지 : 총 7 페이지
제조업체: STMicroelectronics
( stm )
BUV298AV transistor
데이터시트 다운로드 :
[ BUV298AV.PDF ]
[ BUV298AV 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
