BUT32V 반도체 회로 부품 판매점
NPN TRANSISTOR POWER MODULE
|
|
 STMicroelectronics |
® BUT32V
NPN TRANSISTOR POWER MODULE
s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW Rth JUNCTION CASE
s SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s FULLY INSULATED PACKAGE (U.L.
)COMPLIANT) FOR EASY MOUNTING
t(ss LOW INTERNAL PARASITIC INDUCTANCE
ucINDUSTRIAL APPLICATIONS:
ds MOTOR CONTROL
ros SMPS & UPS
- Obsolete Ps DC/DC & DC/AC CONVERTERS
Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
solete Product(s)ABSOLUTE MAXIMUM RATINGS
ObSymbol
Parameter
Value
Unit
VCEV Collector-Emitter Voltage (VBE = -5 V)
400 V
VCEO(sus) Collector-Emitter Voltage (IB = 0)
300 V
VEBO Emitter-Base Voltage (IC = 0)
7V
IC Collector Current
80 A
ICM Collector Peak Current (tp = 10 ms)
120 A
IB Base Current
16 A
IBM Base Peak Current (tp = 10 ms)
Ptot Total Dissipation at Tc = 25 oC
24 A
250 W
Visol Insulation Withstand Voltage (RMS) from All
Four Terminals to External Heatsink
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
2500
-55 to 150
150
oC
oC
February 2003
1/7
BUT32V
THERMAL DATA
Rthj-case
Rthc-h
Thermal Resistance Junction-case
Max
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
0.5
0.05
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICER
Collector Cut-off
Current (RBE = 5 Ω)
VCE = VCEV
VCE = VCEV
Tc = 100 oC
1 mA
5 mA
ICEV Collector Cut-off
Current (VBE = -5)
VCE = VCEV
VCE = VCEV
Tc = 100 oC
t(s)IEBO
Emitter Cut-off Current VEB = 5 V
(IC = 0)
cVCEO(sus)* Collector-Emitter
uSustaining Voltage
d(IB = 0)
IC = 0.2 A
Vclamp = 300 V
L = 25 mH
rohFE∗ DC Current Gain
IC = 40 A
VCE = 5 V
PVCE(sat)∗ Collector-Emitter
teSaturation Voltage
IC = 40 A IB = 4 A
IC = 40 A IB = 4 A Tc = 100 oC
leVBE(sat)∗ Base-Emitter
oSaturation Voltage
IC = 40 A IB = 4 A
IC = 40 A IB = 4 A Tc = 100 oC
sdiC/dt Rate of Rise of
ObOn-state Collector
VCC = 300 V
tp = 3 µs
Tc = 100 oC
RC = 0
IB1 = 6 A
-VCE(3 µs) Collector-Emitter
t(s)Dynamic Voltage
VCC = 300 V
IB1 = 6 A
RC = 6.2 Ω
Tc = 100 oC
VCE(5 µs) Collector-Emitter
cDynamic Voltage
VCC = 300 V
IB1 = 6 A
RC = 6.2 Ω
Tc = 100 oC
duts Storage Time
rotf Fall Time
Ptc Cross-over Time
IC = 40 A
VBB = -5 V
Vclamp = 300 V
L = 0.3 mH
VCC = 250 V
RBB = 0.6 Ω
IB1 = 4 A
Tc = 100 oC
teVCEW Maximum Collector
ICWoff = 60 A
leEmitter Voltage
VBB = -5 V
so Without Snubber
L = 42 µH
Tc = 125 oC
Ob∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IB1 = 4 A
VCC = 50 V
RBB = 0.6 Ω
1 mA
4 mA
1 mA
300 V
16
0.6 0.9
1.2 1.9
V
V
1.12
1.1
1.3
1.3
V
V
120 180
A/µs
36
1.8 3
1.9
0.12
0.35
3
0.4
0.7
300
V
V
µs
µs
µs
V
2/7
|
PDF 파일 내의 페이지 : 총 7 페이지
제조업체: STMicroelectronics
( stm )
BUT32V transistor
데이터시트 다운로드 :
[ BUT32V.PDF ]
[ BUT32V 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
