BUK9535-55 반도체 회로 부품 판매점
TrenchMOS transistor Logic level FET
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 NXP Semiconductors |
Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
BUK9535-55
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope using ’trench’
technology. The device features very
low on-state resistance and has
integral zener diodes giving ESD
protection up to 2kV. It is intended for
use in automotive and general
purpose switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 5 V
MAX.
55
34
85
175
35
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
UNIT
V
A
W
˚C
mΩ
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
-
RGS = 20 kΩ
-
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
ESD LIMITING VALUE
SYMBOL
VC
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
10
34
24
136
85
175
UNIT
V
V
V
A
A
A
W
˚C
MIN.
-
MAX.
2
UNIT
kV
TYP.
-
60
MAX.
1.75
-
UNIT
K/W
K/W
April 1998 1 Rev 1.100
Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
BUK9535-55
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
±V(BR)GSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA;
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
VDS = 55 V; VGS = 0 V;
Tj = 175˚C
VGS = ±5 V; VDS = 0 V
Tj = 175˚C
IG = ±1 mA;
VGS = 5 V; ID = 17 A
Tj = 175˚C
MIN.
55
50
1
0.5
-
-
-
-
-
10
TYP.
-
-
1.5
-
-
0.05
-
0.02
-
MAX.
-
-
2
-
2.3
10
500
1
10
-
UNIT
V
V
V
V
µA
µA
µA
µA
V
- 28 35 mΩ
- - 74 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
gfs Forward transconductance
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
td on Turn-on delay time
tr Turn-on rise time
td off Turn-off delay time
tf Turn-off fall time
Ld Internal drain inductance
Ld Internal drain inductance
Ls Internal source inductance
CONDITIONS
VDS = 25 V; ID = 15 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 15 A;
VGS = 5 V; RG = 10 Ω
Resistive load
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
12
-
-
-
-
-
-
-
-
TYP.
-
1050
205
110
14
77
55
48
3.5
MAX.
-
1400
245
150
21
110
80
65
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
- 4.5 - nH
- 7.5 - nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR Continuous reverse drain
current
IDRM Pulsed reverse drain current
VSD Diode forward voltage
IF = 25 A; VGS = 0 V
IF = 34 A; VGS = 0 V
trr Reverse recovery time IF = 34 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 30 V
MIN. TYP. MAX. UNIT
- - 34 A
- - 136 A
- 0.95 1.2 V
- 1.0 -
- 40 -
- 0.16 -
ns
µC
April 1998 2 Rev 1.100
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BUK9535-55 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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