BUK9505-30A 반도체 회로 부품 판매점
TrenchMOS transistor Logic level FET
|
|
 NXP Semiconductors |
Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
BUK9505-30A
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope using ’trench’
technology which features very low
on-state resistance. It is intended for
use in automotive and general
purpose switching applications.
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 5 V
VGS = 10 V
MAX.
30
75
230
175
5
4.6
PIN CONFIGURATION
SYMBOL
d
tab
1 23
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
±VGSM
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source voltage
-
RGS = 20 kΩ
-
tp≤50µS
ID
ID
IDM
Ptot
Tstg, Tj
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
30
30
10
15
75
75
400
230
175
TYP.
-
60
MAX.
0.65
-
UNIT
V
A
W
˚C
mΩ
mΩ
UNIT
V
V
V
V
A
A
A
W
˚C
UNIT
K/W
K/W
August 1999
1
Rev 1.100
Philips Semiconductors
TrenchMOS™ transistor
Logic level FET
Product specification
BUK9505-30A
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA;
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 175˚C
Tj = -55˚C
VDS = 30 V; VGS = 0 V;
Tj = 175˚C
VGS = ±10 V; VDS = 0 V
VGS = 5 V; ID = 25 A
Tj = 175˚C
VGS = 10 V; ID = 25 A
VGS = 4.5 V; ID = 25 A
MIN.
30
27
1
0.5
-
-
-
-
-
-
-
-
TYP.
-
-
1.5
-
-
0.05
-
2
4.3
-
3.9
-
MAX.
-
-
2.0
-
2.3
10
500
100
5
9.3
4.6
5.4
UNIT
V
V
V
V
V
µA
µA
nA
mΩ
mΩ
mΩ
mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
td on Turn-on delay time
tr Turn-on rise time
td off Turn-off delay time
tf Turn-off fall time
Ld Internal drain inductance
Ld Internal drain inductance
Ls Internal source inductance
CONDITIONS
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; Rload =1.2Ω;
VGS = 5 V; RG = 10 Ω
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
-
-
-
-
-
-
-
-
TYP.
6500
1500
1000
45
220
435
320
3.5
MAX.
8600
1800
1350
65
330
600
450
-
UNIT
pF
pF
pF
ns
ns
ns
ns
nH
- 4.5 - nH
- 7.5 - nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR Continuous reverse drain
current
IDRM Pulsed reverse drain current
VSD Diode forward voltage
IF = 25 A; VGS = 0 V
IF = 75 A; VGS = 0 V
trr Reverse recovery time IF = 75 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = -10 V; VR = 30 V
MIN. TYP. MAX. UNIT
- - 75 A
- - 240 A
- 0.85 1.2 V
- 1.1 -
V
- 400 -
ns
- 1.0 - µC
August 1999
2
Rev 1.100
|
PDF 파일 내의 페이지 : 총 8 페이지
제조업체: NXP Semiconductors
( nxp )
BUK9505-30A transistor
데이터시트 다운로드 :
[ BUK9505-30A.PDF ]
[ BUK9505-30A 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
