BUK475-60H 반도체 회로 부품 판매점
PowerMOS transistor Isolated version of BUK455-60H
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 NXP Semiconductors |
Philips Semiconductors
PowerMOS transistor
Isolated version of BUK455-60H
Product specification
BUK475-60H
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope. The device
is intended for use in Automotive
applications, Switched Mode Power
Supplies (SMPS), motor control,
welding, DC/DC and AC/DC
converters, and in general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
60
22.5
30
150
34
PINNING - SOT186A
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
IDM
Ptot
Tstg
Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction temperature
-
RGS = 20 kΩ
-
Ths = 25 ˚C
Ths = 100 ˚C
Ths = 25 ˚C
Ths = 25 ˚C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
TYP.
-
55
MAX.
60
60
30
22.5
14
90
30
150
150
MAX.
4.17
-
UNIT
V
A
W
˚C
mΩ
UNIT
V
V
V
A
A
A
W
˚C
˚C
UNIT
K/W
K/W
November 1996
1
Rev 1.200
Philips Semiconductors
PowerMOS transistor
Product specification
BUK475-60H
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 60 V; VGS = 0 V; Tj = 25 ˚C
VDS = 60 V; VGS = 0 V; Tj =125 ˚C
VGS = ±30 V; VDS = 0 V
VGS = 10 V; ID = 20 A
MIN. TYP. MAX. UNIT
60 - - V
2.1 3.0 4.0 V
- 1 10 µA
- 0.1 1.0 mA
- 10 100 nA
- 24 34 mΩ
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
gfs Forward transconductance
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
td on Turn-on delay time
tr Turn-on rise time
td off Turn-off delay time
tf Turn-off fall time
Ld Internal drain inductance
Ls Internal source inductance
CONDITIONS
VDS = 25 V; ID = 20 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 10 V; RGS = 50 Ω;
Rgen = 50 Ω
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
8
-
-
-
-
-
-
-
-
TYP.
13.5
1000
470
180
25
60
125
100
4.5
MAX.
-
1600
600
275
40
90
160
130
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
- 7.5 - nH
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 10 - pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM Pulsed reverse drain current -
VSD Diode forward voltage
IF = 22.5 A ; VGS = 0 V
trr Reverse recovery time IF = 22.5 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 30 V
MIN. TYP. MAX. UNIT
- - 22.5 A
- - 90 A
- 0.9 1.8 V
- 60 -
- 0.25 -
ns
µC
November 1996
2
Rev 1.200
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BUK475-60H transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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