BUK463-60A 반도체 회로 부품 판매점
PowerMOS transistor
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 NXP Semiconductors |
Philips Semiconductors
PowerMOS transistor
Product Specification
BUK463-60A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
BUK463
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
-60A
60
22
75
175
0.08
MAX.
-60B
60
20
75
175
0.10
UNIT
V
A
W
˚C
Ω
PINNING - SOT404
PIN DESCRIPTION
1 gate
2 drain
3 source
mb drain
PIN CONFIGURATION
mb
2
13
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VDS
VDGR
±VGS
Drain-source voltage
Drain-gate voltage
Gate-source voltage
-
RGS = 20 kΩ
-
-
-
-
ID Drain current (DC)
Tmb = 25 ˚C
ID Drain current (DC)
Tmb = 100 ˚C
IDM Drain current (pulse peak value) Tmb = 25 ˚C
Ptot Total power dissipation
Tstg Storage temperature
Tj Junction Temperature
Tmb = 25 ˚C
-
-
-
-
-
-
- 55
-
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
minimum footprint,
FR4 board (see Fig. 18).
MAX.
60
60
30
-60A
22
15
88
-60B
20
14
80
75
175
175
UNIT
V
V
V
A
A
A
W
˚C
˚C
TYP.
-
50
MAX.
2.0
-
UNIT
K/W
K/W
July 1995
1 Rev 1.000
Philips Semiconductors
PowerMOS transistor
Product Specification
BUK463-60A/B
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 60 V; VGS = 0 V; Tj = 25 ˚C
VDS = 60 V; VGS = 0 V; Tj =125 ˚C
VGS = ±30 V; VDS = 0 V
VGS = 10 V; ID =
BUK463-60A
10 A
BUK463-60B
MIN.
60
2.1
-
-
-
-
-
TYP.
-
3.0
1
0.1
10
0.07
0.08
MAX. UNIT
-V
4.0 V
10 µA
1.0 mA
100 nA
0.08 Ω
0.10 Ω
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
gfs Forward transconductance
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
td on Turn-on delay time
tr Turn-on rise time
td off Turn-off delay time
tf Turn-off fall time
Ld Internal drain inductance
Ls Internal source inductance
CONDITIONS
VDS = 25 V; ID = 10 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 10 V; RGS = 50 Ω;
Rgen = 50 Ω
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
MIN.
4.5
-
-
-
-
-
-
-
-
-
TYP.
6.5
650
240
120
10
35
60
55
4.5
7.5
MAX.
-
825
350
160
20
55
90
80
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
- nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM Pulsed reverse drain current -
VSD Diode forward voltage
IF = 22 A ; VGS = 0 V
trr Reverse recovery time IF = 22 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 30 V
AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
ID = 22 A ; VDD ≤ 25 V ;
VGS = 10 V ; RGS = 50 Ω
MIN. TYP. MAX. UNIT
- - 22 A
- - 88 A
- 1.3 1.7 V
- 60 -
- 0.25 -
ns
µC
MIN. TYP. MAX. UNIT
- - 50 mJ
July 1995
2 Rev 1.000
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BUK463-60A transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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관련 데이터시트
BUK463-60A
PowerMOS transistor - NXP Semiconductors
BUK463-60B
PowerMOS transistor - NXP Semiconductors