BUK451-100B 반도체 회로 부품 판매점
PowerMOS transistor
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 NXP Semiconductors |
Philips Semiconductors
PowerMOS transistor
Preliminary Specification
BUK451-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
BUK451
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
-100A
100
3.0
40
175
0.85
MAX.
-100B
100
3.0
40
175
1.1
UNIT
V
A
W
˚C
Ω
PINNING - TO220AB
PIN DESCRIPTION
1 gate
2 drain
3 source
tab drain
PIN CONFIGURATION
tab
1 23
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VDS
VDGR
±VGS
Drain-source voltage
Drain-gate voltage
Gate-source voltage
-
RGS = 20 kΩ
-
-
-
-
ID Drain current (DC)
Tmb = 25 ˚C
ID Drain current (DC)
Tmb = 100 ˚C
IDM Drain current (pulse peak value) Tmb = 25 ˚C
Ptot Total power dissipation
Tstg Storage temperature
Tj Junction Temperature
Tmb = 25 ˚C
-
-
-
-
-
-
- 55
-
MAX.
100
100
30
-100A
3.0
3.0
12
-100B
3.0
3.0
12
40
175
175
UNIT
V
V
V
A
A
A
W
˚C
˚C
Philips Semiconductors
PowerMOS transistor
Preliminary Specification
BUK451-100A/B
THERMAL RESISTANCES
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN. TYP. MAX. UNIT
- - 3.75 K/W
- 60 - K/W
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 100 V; VGS = 0 V; Tj = 25 ˚C
VDS = 100 V; VGS = 0 V; Tj =125 ˚C
VGS = ±30 V; VDS = 0 V
VGS = 10 V;
BUK451-100A
ID = 2.5 A
BUK451-100B
MIN.
100
2.1
-
-
-
-
-
TYP.
-
3.0
1
0.1
10
0.75
0.90
MAX. UNIT
-V
4.0 V
10 µA
1.0 mA
100 nA
0.85 Ω
1.10 Ω
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
gfs Forward transconductance
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
td on Turn-on delay time
tr Turn-on rise time
td off Turn-off delay time
tf Turn-off fall time
Ld Internal drain inductance
Ld Internal drain inductance
Ls Internal source inductance
CONDITIONS
VDS = 25 V; ID = 2.5 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 10 V; RGS = 50 Ω;
Rgen = 50 Ω
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
1.3
-
-
-
-
-
-
-
-
TYP.
1.7
160
45
16
4
15
10
10
3.5
MAX.
-
240
60
25
6
25
20
20
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
- 4.5 - nH
- 7.5 - nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM Pulsed reverse drain current -
VSD Diode forward voltage
IF = 3.0 A ; VGS = 0 V
trr Reverse recovery time IF = 3.0 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 30 V
MIN. TYP. MAX. UNIT
- - 3.0 A
- - 12 A
- 1.1 1.4 V
- 100 -
- 0.25 -
ns
µC
January 1980
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제조업체: NXP Semiconductors
( nxp )
BUK451-100B transistor
데이터시트 다운로드 :
[ BUK451-100B.PDF ]
[ BUK451-100B 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
BUK451-100A
PowerMOS transistor - NXP Semiconductors
BUK451-100B
PowerMOS transistor - NXP Semiconductors