BC858-AU 반도체 회로 부품 판매점
PNP GENERAL PURPOSE TRANSISTORS
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 Pan Jit International |
BC856-AU,BC857-AU,BC858-AU,BC859-AU SERIES
PNP GENERAL PURPOSE TRANSISTORS
VOLTAGE 30/45/65 Volts POWER 330 mWatts
FEATURES
• General Purpose Amplifier Applications
• Collector Current IC = -100mA
• Complimentary (PNP) Devices : BC846/BC847/BC848/BC849
Series
• Acqire quality system certificate : TS16949
• AEC-Q101 qualified
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
Case: SOT-23
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
Marking:
Device Marking:
BC856A-AU=56A BC857A-AU=57A BC858A-AU=58A
BC856B-AU=56B BC857B-AU=57B BC858B-AU=58B BC859B-AU=59B
BC857C-AU=57C BC858C-AU=58C BC859C-AU=59C
SOT-23
0.120(3.04)
0.110(2.80)
Unit：inch(mm)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
Top View
3
Collector
3
Collector
1
Base
12
Base Emitter
2
Emitter
ABSOLUTE RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Max Power Dissipation(Note1)
Typical Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
NOTES:
1. Transistor mounted on FR-4 board 8 cm2.
April 23,2012-REV.03
Symbol BC856-AU BC857-AU BC858-AU BC859-AU
VCEO
-65
-45
-30
VCBO
-80
-50
-30
VEBO
-5
I C -100
PTOT
330
RΘJA
375
TJ,TSTG
-50 to 150
Units
V
V
V
mA
mW
oC/W
oC
PAGE . 1
BC856-AU,BC857-AU,BC858-AU,BC859-AU SERIES
ELECTRICAL CHARACTERISTICS
PA RA ME TE R
Symbol
Test C ondi ti on
BC856A-AU/B-AU
Collector - Emitter Breakdown Voltage BC857A-AU/B-AU/C-AU
V(BR)CEO IC=-10mA , IB=0
BC858A-AU/B-AU/C-AU,BC859B-AU/C-AU
Collector - Base Breakdown Voltage
BC856A-AU/B-AU
BC857A-AU/B-AU/C-AU
V (BR)C B O IC=-1 0μA , IE=0
BC858A-AU/B-AU/C-AU,BC859B-AU/C-AU
Emitter - Base Breakdown Voltage
V (BR)EB O IE=-1.0μA , IC=0
MIN. TYP. MA X. Units
-65
-45 - - V
-30
-80
-50 - - V
-30
-5.0 - - V
Emitter-Base Cutoff Current
IEBO V EB=-5V
Collector-Base Cutoff Current
DC Current Gain
BC856A-AU,BC857A-AU,BC858A-AU
BC856B-AU,BC857B-AU,BC858B-AU,BC859B-AU
BC857C-AU,BC858C-AU,BC859C-AU
IC B O
VCB=-30V, IE=0
V CB=-30V, IE=0,TJ=150OC
hFE IC=-10μA , VCE=-5V
DC Current Gain
BC856A-AU,BC857A-AU,BC858A-AU
BC856B-AU,BC857B-AU,BC858B-AU,BC859B-AU
BC857C-AU,BC858C-AU,BC859C-AU
hFE IC=-2.0mA, VCE=-5V
Collector - Emitter Saturation Voltage
Base - Emitter Saturation Voltage
Base - Emitter On Voltage
V C E (S AT)
V B E (S AT)
V BE(ON)
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5.0mA
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5.0mA
IC=-2mA, VCE=-5.0V
IC=-10mA, VCE=-5.0V
Collector - Base Capacitance
CCB VCB=-10V, IE=0, f=1MH
- - -100
-
-
-15
-4.0
90
- 150 -
270
110 180 220
220 290 475
420 520 800
-
-
-0.3
-0.65
-
-0.7
-0.9
-
-0.60 - -0.75
- - -0.82
- - 4.5
nA
nA
μA
-
-
V
V
V
pF
Current-Gain-Bandwidth Product
FT IC=-10mA, VCE=-5.0V,f=100MHz
-
200
-
MHz
April 23,2012-REV.03
PAGE . 2
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BC858-AU transistor
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