MD7007B 반도체 회로 부품 판매점
DUAL AMPLIFIER TRANSISTOR
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 Motorola Semiconductors |
MD7007,A,B,F,BF
MQ7007
MD7007,A,B
CASE 654-07, STYLE 1
MD7007F,BF
CASE 610A-04, STYLE 1
MQ7007
CASE 607-04, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ Ta = 25°C
MD7007,A,B
MD7007F,BF
MQ7007
Derate above 25°C
MD7007,A,B
MD7007F,BF
MQ7007
Total Device Dissipation
@ TC = 25°C
MD7007,A,B
MD7007F,BF
MQ7007
Derate above 25°C
MD7007,A,B
MD7007F,BF
MQ7007
Operating and Storage Junction
Temperature Range
Symbol
VCEO
vCBO
v EBO
•c
PD
Value
Unit
40 Vdc
50 Vdc
5.0 Vdc
200 mAdc
One Die
All Die
Equal Power
mW
575
350
400
3.29
2.0
2.28
Pd
625
400
600
3.57
2.28
3.42
mW/°C
Watts
Tj. Tst g
1.8 2.5
1.0 2.0
0.9 3.6
10.3
5.71
5.13
14.3
11.4
20.5
- 65 to + 200
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MD7007,A,B
MD7007F,BF
MQ7007
MD7007,A,B
MD7007F,BF
MQ7007
Symbol
Rajc
R&JAd)
Coupling Factors
MD7007AB
MD7007F,BF
MQ7007 (Q1-Q2)
(Q1-Q2 or Q1-Q4)
|1) RfljA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
dC = 10 mAdc, Bl = 0)
Collector-Base Breakdown Voltage
dC = 10 /tAdc, El = 0)
Emitter-Base Breakdown Voltage
(IE = 10 /uAdc, lc = 0)
Collector Cutoff Current
(Vcb = 30 Vdc, If = 0)
ON CHARACTERISTICS^)
DC Current Gain
dC = 100 /iAdc, Vce = 10 Vdc)
dC = 10 mAdc, Vce = 10 Vdc)
flC
=
10 mAdc, Vce
=
10
Vdc
>
dC
=
50 mAdc, Vce
°=
10 vdc
>
Symbol
V(BR)CEO
v (BR)CBO
v (BR)EBO
'CBO
hFE
One Die
All Die
Equal Power
97 70
175 87.5
195 48.8
304
500
438
Junction to
Ambient
280
438
292
Junction to
Case
84 44
75
57
55
Min Typ Max
40 — —
50 — —
— —5.0
— — 100
—30 110
—30 130
—30 75
—15 25
Unit
°C/W
°c/w
%
Unit
Vdc
Vdc
Vdc
nAdc
—
5-82
MD7007,A,B,F,BF, MQ7007
ELECTRICAL CHARACTERISTICS (continued) (Ta = 25°C unless otherwise noted.;
Characteristic
Symbol
Collector-Emitter Saturation Voltage
OC = 50 mAdc, Ib = 5.0 mAdc)
Base-Emitter Saturation Voltage
dC = 50 mAdc, Ib = 5.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product(2)
dC = 10 mAdc, VC E = 10 Vdc, f = 100 MHz)
Output Capacitance
(Vcb = 10 Vdc, El = 0, f = 100 kHz)
Input Capacitance
(Vbe = 2.0 Vdc, lc = 0, f = 100 kHz)
MATCHING CHARACTERISTICS
DC Current Gain Ratio(3)
dC = 10 mAdc, Vce = 10 Vdc)
Base-Emitter Voltage Differential
dC = 10 mAdc, Vce = 10 Vdc)
(2) Pulse Test: Pulse Width *s 300 /as. Duty Cycle « 2.0%.
(3) The lowest hpE reading is taken as hpE1 f° r this ratio.
VCE(sat)
v BE(sat)
fT
C bo
Cjbo
MD7007A
MD7007B
MD7007A
MD7007B
hFE1 /h FE2
|VBE1- v BE2l
Min
-
—
300
—
—
0.75
0.85
-
Typ
0.38
0.9
Max
1.0
1.5
Unit
Vdc
Vdc
—600 MHz
4.0 8.0 pF
3.8 10 pF
-
'
1.0
1.0
—
- mVdc
20
10
5-83
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( motorola )
MD7007B transistor
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관련 데이터시트
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