MD2905A 반도체 회로 부품 판매점
DUAL AMPLIFIER TRANSISTOR
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 Motorola Semiconductors |
MD2904,A,F,AF
MD2905,A,F,AF
MQ2904, MQ2905A
MD2904,A
MD2905,A
CASE 654-07, STYLE 1
MD2904F,AF
MD2905F,AF
CASE 610A-04, STYLE 1
MQ2904
MQ2905A
CASE 607-04, STYLE 1
DUAL
AMPLIFIER TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ Ta = 25°C
MD2904A MD2905,A
MD2904F.AF, MD2905.AF
MQ2904, MQ2905A
Derate above 25°C
MD2904A MD2905.A
MD2904,F,AF, MD2905F,AF
MQ2904, MQ2905A
Total Device Dissipation
@ TC = 25°C
MD2904,A, MD2905,A
MD2904F,AF, MD2905F.AF
MQ2904, MQ2905A
Derate above 25°C
MD2904A MD2905.A
MD2904F,AF, MD2905F.AF
MQ2904, MQ2905A
Operating and Storage Junction
Temperature Range
Symbol
VCEO
v CBO
v EBO
ic.
PD
MD2904.F
MD2905.F
MQ2904
MD2904A,AF
MD2905A,AF
MQ2905A
Unit
40 60 Vdc
60 Vdc
5.0 Vdc
600 mAdc
One Die
All Die
Equal Power
mW
575 625
350 400
400 600 mW/°C
3.29
2.0
2.28
Pd
3.57
2.28
3.42
Watts
1.8 2.5
1.0 2.0
0.9 3.6 rhW/°C
TJ. Tstg
10.3
5.71
5.13
14.3
11.4
20.5
- 65 to + 200
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MD2904A MD2905.A
MD2904F.AF, MD2905F,AF
MQ2904, MQ2905A
Thermal Resistance, Junction to Ambient
MD2904A MD2905,A
MD2904F.AF, MD2905F.AF
MQ2904, MQ2905A
Symbol
R 0JC
R&ja(i)
Coupling Factor
MD2904A MD2905,A
MD2904F,AF, MD2905F,AF
MQ2904, MQ2905A (Q1-Q2)
(Q1-Q3 or Q1-Q4)
(1) R&ja is measured with the device soldered into a typical printed circuit board.
One Die
All Die
Equal Power
97 70
175 87.5
195 48.8
304
500
438
Junction to
Ambient
280
438
292
Junction to
Case
84 44
75
57
55
Unit
°c/w
°c/w
%
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
flC = 10 mAdc, Ib = 0)
MD2904, MD2905
MD2904A, MD2905A
Collector-Base Breakdown Voltage
dC = 10/xAdc, l£ - 0)
Emitter-Base Breakdown Voltage
(IE = 10 /Adc, Ic = 0)
Collector Cutoff Current
(Vcb = 50 Vdc, l£ = 0)
(VC b = 50 Vdc, El = 0, TA = 150°C)
Symbol
v (BR)CEO
V(BR)CBO
V|BR)EBO
'CBO
Min
40
60
60
5.0
-
Typ Max Unit
- - Vdc
— — Vdc
— — Vdc
- 0.020
/Adc
30
5-52
MD2904,A,F,AF, MD2905,A,F,AF, MQ2904, MQ2905A
ELECTRICAL CHARACTERISTICS (continued) (Ta = 25°C unless otherwise noted.)
Characteristic
Symbol
Emitter Cutoff Current
(Vbe = 3.0 Vdc, lc = 0)
ON CHARACTERISTICS^)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
MD2904
MO2904A
MD2905
MD2905A
Iebo
"FE
(IC = 1.0 mAdc, VCe = 10 Vdc)
MD2904
MD2904A
MD2905
MD2905A
(IC = 10 mAdc, Vqe = 10 Vdc)
MD2904
MD2904A
MD2905
MD2905A
c(l = 150 mAdc, VC E = 10 Vdc)
MD2904.A,
MD2905,A
c(l = 500 mAdc, VCE = 10 Vdc)
MD2904
MD2904A
MD2905
MD2905A
Colle.ctor-Emitter Saturation Voltage
dC = 150 mAdc, Ig = 15 mAdc)
0c = 500 mAdc, Ib = 50 mAdc)
Base-Emitter Saturation Voltage
dC = 150 mAdc, Ib = 15 mAdc)
(IC = 500 mAdc, Ib = 50 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product(3)
c(l = 50 mAdc, VCe = 20 Vdc, f = 100 MHz)
Output Capacitance
(Vcb = 10 Vdc, El = 0, f = 100 kHz)
Input Capacitance
(Vbe = 2-0 Vdc, lc = 0, f = 100 kHz)
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
(V C c = 30 Vdc, V BE = 0.5 Vdc,
IC = 1 50 mAdc,
IB1 = 15 mAdc)
Turn-Off Time
Storage Time
Fall Time
(Vcc = 30 Vdc,
IC = 150 mAdc,
'B1 = 'B2 = 15 mAdc)
(2) Pulse Test: Pulse Width « 300 fis, Duty Cycle *s 2.0%.
(3) Pulse Test: Pulse Width s 300 /xs, Duty Cycle =s 2.0%.
v CE(sat)
v BE(sat)
fT
C bo
C|bo
ton
td
tr
l off
ts
tf
Min
-
20
40
35
75
25
40
50
100
35
40
75
100
40
100
20
40
30
50
-
-
200
—
—
—
—
-
—
-
-
Typ
Max
Unit
- 30 nAdc
50
70
70
150
75
75
100
175
90
90
110
200
90
200
60
80
130
150
0.25
0.5
0.88
1.0
320
5.8
16
—
—
—
—
—
-
120
300
0.4
1.6
1.3
2.6
—
'
8.0
30
45
12
35
130
100
40
Vdc
Vdc
MHz
PF
PF
ns
ns
ns
ns
ns
ns
5-53
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제조업체: Motorola Semiconductors
( motorola )
MD2905A transistor
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