MPS404 반도체 회로 부품 판매점
CHOPPER TRANSISTOR
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 Motorola Semiconductors |
MPS404
MPS404A
CASE 29-02, STYLE 1
TO-92 (TO-226AA)
CHOPPER TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (go T^ = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol MPS404 MPS404A
VCEO
24
35
VCBO
25
40
VEBO
12
25
"C 150
PD 625
5.0
Pd 1.5
12
TJ' Tstg
- 55 to + 1 50
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R&jc
83.3
°C/W
Thermal Resistance, Junction to Ambient
RfljAd)
200
°c/w
(1) R&JA is measured with the device soldered into a typical printed circuit board.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.:
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(IC = 10 mAdc, Ib = 0)
MPS404
MPS404A
Collector-Base Breakdown Voltage
(IC = 10 /nAdc, Ie = 0)
MPS404
MPS404A
Emitter-Base Breakdown Voltage
(IE = 10 juAdc, lc = 0)
MPS404
MPS404A
Collector Cutoff Current
(VC b = 10 Vdc, Ie = 0)
Emitter Cutoff Current
(V B e = 10 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 12 mAdc, Vqe = 0.15 Vdc)
Collector-Emitter Saturation Voltage
dC = 12 mAdc, Ib = 0.4 mAdc)
dC = 24 mAdc, Ib = 1.0 mAdc)
Base-Emitter Saturation Voltage
dC = 12 mAdc, Ib = 0.4 mAdc)
dC = 24 mAdc, Ib = 1.0 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Common-Base Cutoff Frequency
dC = 1.0 mAdc, Vcb = 6.0 Vdc)
Output Capacitance
(VCB
=
60
Vdc
'
IE
=
0, f
=
1.0 MHz)
(2) Pulse Test: Pulse Width « 300 ^s, Duty Cycle =s 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
v (BR)EBO
'CBO
lEBO
hFE
VcE(sat)
v BE(sat)
fob
C-obo
24
35
25
40
12
25
—
—
30
-
-
4.0
—
Typ
Vdc
--
-
Vdc
-
Vdc
50 -
50
— 100 nAdc
— 100 nAdc
100
0.1
0.12
0.7
0.74
—
6.8
400
0.15
0.20
0.85
1.0
—
20
—
Vdc
Vdc
MHz
pF
2-178
MPS404, MPS404A
FIGURE 1 - COLLECTOR-EMITTER VOLTAGE
<<
oo
Mil
I 1 11
-INVERTED MODE
VCE(sat)@IC/lB= 10
M
B=2 n
/
/:
t
i
i
/
,'
E o 20
X-^
VE C(sat)@ IE/'B = 2.0
2.0 3.0
50 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
IE, EMITTER CURRENT (mA)
50 70 100
FIGURE 2 - BASE "ON" VOLTAGE
>o 0.82
II
NORMAL MODE
-- NVERTED MODE
I II
Tj = 25°C
—VBE(sat) @tC/lB = 2
{
^ t 0.66 -*
""
^,
/
/
//
y/
^ f^
I
*
u^ f
^_
V BE (on @v CE=1.0V
2.0 3.0
5.0 7.0 10
20 30
IC. COLLECTOR CURRENT (mA)
I E. EMITTER CURRENT (mA)
50 70 100
NORMAL MODE
FIGURE 3 - DC CURRENT GAIN @ V CE = 0.15 Vdc
-^
r >i
25 c
"* ^55° z
2.0 3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50 70 100
FIGURE 5 - DC CURRENT GAIN @ V CE = 1.0 Vdc
Mill
Ti? 125°C
"2
-5 5°C
INVERTED MODE
FIGURE 4 - DC CURRENT GAIN @ V EC = 0.15 Vdc
—-
— -^_
pj
2 >°C-^
S
»»»
5°C^ ^***^
5n
^
sv
s
•
2.0 3.0
5.0 7.0 10
20 30
IE. EMITTER CURRENT (mA)
50 70 10
FIGURE 6 - DC CURRENT GAIN @ V EC = 1.0 Vdc
LI 1
-•—
=
j
-,,
~- -
v;~i*i
25°t
-^
55°(
^ ' *-
*\l
\
N
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
l£, EMITTER CURRENT (mA)
2-179
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MPS404 transistor
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