2N3546 반도체 회로 부품 판매점
SWITCHING TRANSISTOR
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 Motorola Semiconductors |
2N3546
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
SWITCHING TRANSISTOR
PNP SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
DC Collector Current
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tq = 25°C
Derate above 25°C
Operating and Storage Temperature
Temperature Range
Symbol
vCEO
.
vCBO
v EBO
'C
pd
Pd
TJ- Tstg
Value
12
15
4.5
200
0.36
2.06
1.2
6.9
- 65 to + 200
Unit
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Watts
mwrc
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R &JC
R 6UA
Max
0.15
0.49
Unit
°C/W
°c/w
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage (1) dc = 10 mAdc, Bl = 0)
Collector-Base Breakdown Voltage flc = 10 /oAdc, lg = 0)
Emitter-Base Breakdown Voltage 0e - 10 ,uAdc, Iq = 0)
Base Cutoff Current (VCE = 10 Vdc, VBE(off) = 3.0 Vdc)
Collector Cutoff Current (Vce = 10 Vdc, VBE(off) = 3 .0 Vdc)
Collector Cutoff Current
ON CHARACTERISTICS
(Vcb = 10 Vdc)
(VCB = 10 Vdc, Ta = 150T)
DC Current Gain (1)
dc'= 1.0 mAdc, Vce : 1.0 Vdc)
dC = 10 mAdc, Vqe = 1.0 Vdc)
dC = 10 mAdc, Vce = 1.0 Vdc, Ta =
dC = 50 mAdc, Vce = 1.0 Vdc)
dC = 100 mAdc, Vce = 1.0 Vdc)
-55°C)'
Collector-Emitter Saturation Voltage (1)
dC = 10 mAdc, Ib = 1.0 mAdc)
dC = 50 mAdc, Iq = 5.0 mAdc)
dC = 100 mAdc, Bl = 10 mAdc)
Base-Emitter Saturation Voltage (1)
dC = 10 mAdc, Ib = 1.0 mAdc)
dC = 50 mAdc, Ib = 5.0 mAdc)
dC = 100 mAdc, Bl = 10 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
dC = 10 mAdc, Vce = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, Ie - 0, f = 1.0 MHz)
Input Capacitance
(VBE = 0.5 Vdc, cl
0, f = 1.0 MHz)
Symbol
v (BR)CEO
v (BR)CBO
v(BR)EBO
!BEV
] CEX
'CBO
Min
15
hFE
v CE(sat)
20
30
15
25
15
v BE(sat)
0.7
0.8
C bo
Cjbo
700
Max
0.10
0.010
0.010
10
120
0.15
0.25
0.50
0.9
1.3
1.6
6.0
5.0
4-106
2N3546
ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
IC = 50 mA, Ibi = 5 .0 mA
V B E = 2.0 V, Vcc = 3.0 V
Storage Time
Fall Time
IC = 50 mA, Ibi = lB2 = 50 mA
VCC = 3.0 V
Turn-On Time
Turn-Off Time
Total Control Charge
C =(I . 50 mA, Bl = 5.0 mA, Vcc = 3 -0 V)
PW(1) Pulse Test:
= 300 /us. Duty Cycle *s 2.0%.
toff
Qt
Min
Max
15
15
Unit
pC
FIGURE 1
LIMITS OF SATURATION VOLTAGES
1.6
I!
Tj = 25°C
1.4
1.2
-
1.0
1
I
MMA IVu
U.8
FIGURE 2
STORAGE TIME BEHAVIOR
30
r~- -~zr-2U = 10*'
—& : = »
•*
^1^-
K^
v.
V-t,- Viti
=l|! <I2
10
Ml IV.E li.t
U.4
//
^ "\«•"
S
n
1.0
2.0
5.0 10 20
cl . COLLECTOR CURRENT (mA)
FIGURE 3
DELAY AND RISE TIME
EQUIVALENT TEST CIRCUIT
-3V
50 100
FIGURE 4
STORAGE AND FALL TIME
EQUIVALENT TEST CIRCUIT
-3V
20 30
50 70 100
cl , COLLECTOR CURRENT (mA)
FIGURE 5
SWITCHING TIME TEST CIRCUIT
VBB
"2 V
o
ioon|
I
f© vout*
;i;cs <iOpF
ii
PULSE WIDTH = 200 ns
RISE TIME s£ 2 ns
DUTY CYCLED 10%
•OSCILLOSCOPE RISE TIME s£ 1 ns
V—Vin -11.3
J
V—
PULSE WIDTH = 200 ns
^RISE TIME 2 ns
<DUTY CYCLE 10%
PULSE WIDTH > 200 ns
<RISE TIME 2 ns
nZ in = 50
W VBB =+3V,V in = -7V
toff: V B B = -4V,V in = +6V
4-107
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2N3546 transistor
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