BSS64LT1G 반도체 회로 부품 판매점
Driver Transistor
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 ON Semiconductor |
BSS64LT1G
Driver Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
VCEO 80 Vdc
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
VCBO
VEBO
IC
120 Vdc
5.0 Vdc
100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance, Junction−to−Ambient RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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COLLECTOR
3
1
BASE
2
EMITTER
1
2
3
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
AM M G
G
1
AM = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BSS64LT1G
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
November, 2016 − Rev. 6
1
Publication Order Number:
BSS64LT1/D
BSS64LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 4.0 mAdc)
V(BR)CEO
Vdc
80 −
Collector −Base Breakdown Voltage
(IC = 100 mAdc)
V(BR)CBO
Vdc
120 −
Emitter −Base Breakdown Voltage
(IE = 100 mAdc)
Collector Cutoff Current
(VCE = 90 Vdc)
(TA = 150°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc)
ON CHARACTERISTICS
V(BR)EBO
ICBO
IEBO
5.0
−
−
−
Vdc
−
mAdc
0.1
500
nAdc
200
DC Current Gain
(VCE = 1.0 Vdc, IC = 10 mAdc)
Collector −Emitter Saturation Voltage
(IC = 4.0 mAdc, IB = 400 mAdc)
(IC = 50 mAdc, IB = 15 mAdc)
Forward Base −Emitter Voltage
SMALL− SIGNAL CHARACTERISTICS
HFE
−
20 −
VCE(sat)
Vdc
− 0.15
− 0.2
VBE(sat)
−
−
−
Current −Gain − Bandwidth Product
(IC = 4.0 mAdc, VCE = 10 Vdc, f = 20 MHz)
fT MHz
60 −
Output Capacitance
(VCB = 10 Vdc, f = 1.0 MHz)
Cob pF
− 20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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BSS64LT1G transistor
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