MMUN2112LT1 반도체 회로 부품 판매점
PNP SILICON BIAS RESISTOR TRANSISTOR
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 ON Semiconductor |
MMUN2111LT1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel.
• Pb−Free Packages are Available
www.DataSheet4U.com
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
VCBO
VCEO
IC
50 Vdc
50 Vdc
100 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
246 (Note 1)
mW
400 (Note 2)
1.5 (Note 1) °C/W
2.0 (Note 2)
Thermal Resistance,
Junction-to-Ambient
RqJA
508 (Note 1)
311 (Note 2)
°C/W
Thermal Resistance,
Junction-to-Lead
RqJL
174 (Note 1)
208 (Note 2)
°C/W
Junction and Storage,
Temperature Range
TJ, Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 5
1
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PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MARKING
DIAGRAM
3
1
SOT−23
CASE 318
STYLE 6
A6x M G
G
21
A6x = Device Code
x = A − L (Refer to page 2)
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MMUN21xxLT1
Package
Shipping†
SOT−23 3000/Tape & Reel
MMUN21xxLT1G SOT−23 3000/Tape & Reel
(Pb−Free)
MMUN21xxLT3 SOT−23 10000/Tape & Reel
MMUN21xxLT3G SOT−23 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MMUN2111LT1/D
MMUN2111LT1 Series
DEVICE MARKING AND RESISTOR VALUES
Device*
Package
Marking
MMUN2111LT1, G
MMUN2111LT3, G
SOT−23
A6A
MMUN2112LT1, G
SOT−23
A6B
MMUN2113LT1, G
MMUN2113LT3, G
SOT−23
A6C
MMUN2114LT1, G
SOT−23
A6D
MMUN2115LT1, G (Note 3)
SOT−23
A6E
MMUN2116LT1, G (Note 3)
SOT−23
A6F
MMUN2130LT1, G (Note 3)
SOT−23
A6G
MMUN2131LT1, G (Note 3)
SOT−23
A6H
MMUN2132LT1, G (Note 3)
SOT−23
A6J
MMUN2133LT1, G (Note 3)
SOT−23
A6K
MMUN2134LT1, G (Note 3)
SOT−23
A6L
*The “G’’ suffix indicates Pb−Free package available.
3. New devices. Updated curves to follow in subsequent data sheets.
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
Shipping
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
ICBO
ICEO
IEBO
− − 100 nAdc
− − 500 nAdc
− − 0.5 mAdc
− − 0.2
− − 0.1
− − 0.2
− − 0.9
− − 1.9
− − 4.3
− − 2.3
− − 1.5
− − 0.18
− − 0.13
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
V(BR)CBO
V(BR)CEO
50
50
−
−
− Vdc
− Vdc
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