MRF8003 반도체 회로 부품 판매점
RF AMPLIFIER TRANSISTOR
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 Motorola Semiconductors |
MRF8003
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a Ta = 25°C
Derate above 25°C
Storage Temperature
Symbol
VCEO
VCBO
VEBO
>C
PD
Tstg
Value
30
50
3.0
0.5
1.0
5.7
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
°C
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
RF AMPLIFIER TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c<l = 10 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage
c(l = 0.1 mAdc, V B e = 0)
Emitter-Base Breakdown Voltage
(IE = 0.5 mAdc, lc = 0)
Collector Cutoff Current
(V C B = 12 Vdc, l£ = 0)
ON CHARACTERISTICS
DC Current Gain
dC = 100 mAdc, Vce = 10 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance
(Vcb = 12.5 Vdc, Ie = 0, f = 1.0 MHz)
FUNCTIONAL TEST (FIGURE 1)
Common-Emitter Amplifier Power Gain
(Vce = 12.5 Vdc, Pout = 0.5 W, f = 27 MHz)
Collector Efficiency
(VCC = 12-5 Vdc, Pout = 0.5 W, f = 27 MHz)
Symbol
v (BR)CEO
V (BR)CES
v (BR)EBO
!CBO
hFE
Cobo
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Gpe
V
30
50
3.0
—
20
—
10
Typ Max Unit
— — Vdc
— — Vdc
I— — Vdc
— 0.1 mAdc
———
— 15 PF
— — dB
50 %
7-241
MRF8003
FIGURE 1 - 27 MHz TEST CIRCUIT SCHEMATIC
C8 12.5 Vdc
a
C1, C2, C3, C4
C5
C6
C7
C8
LI, L2
L3
L4
R1
9.0-180 pF ARCO 463 or equivalent
25 pF UNDERWOOD
100 pF UNDERWOOD
1000 pF UNDERWOOD
10 MF ELECTROLYTIC
0.47 uH Molded Coil
VK 200-20/4B RFC
16 Turns No. 26 Wire Closewound on
390 n, 2 W
7-242
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제조업체: Motorola Semiconductors
( motorola )
MRF8003 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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