BC183A 반도체 회로 부품 판매점
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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 CDIL |
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CB E
BC182, A, B
BC183, A, B, C
BC184, B, C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Power Dissipation at Ta=25ºC
PD
Derate Above 25ºC
Power Dissipation at Tc=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
Tj, Tstg
BC182
50
60
BC183
30
45
6.0
100
350
2.8
1.0
8.0
- 55 to +150
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Rth (j-c)
Rth (j-a)
125
357
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
VCEO
IC=2mA, IB=0
BC182
Collector Base Voltage
VCBO
BC183/BC184
IC=10µA, IE=0
BC182
Emitter Base Voltage
VEBO
BC183/BC184
IE=100µA, IC=0
Collector Cut Off Current
ICBO VCB=50V, IE=0 BC182
Emitter Cut Off Current
VCB=30V, IE=0 BC183/184
IEBO
VEB=4V, IC=0
MIN
50
30
60
45
6.0
BC182_184Rev_1 201205E
BC184
30
45
UNITS
V
V
V
mA
mW
mW/ºC
W
mW/ºC
ºC
ºC/W
ºC/W
TYP MAX UNITS
V
V
V
V
V
15 nA
15 nA
15 nA
Continental Device India Limited
Data Sheet
Page 1 of 5
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CB E
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
DC Current Gain
SYMBOL
hFE
TEST CONDITION
IC=10µA, VCE=5V
BC182/183
BC184
IC=2mA, VCE=5V
BC182
BC183
BC184
Collector Emitter Saturation Voltage VCE (sat)
Base Emitter Saturation Voltage
Base Emitter On Voltage
VBE (sat)
VBE (on)
IC=100mA, VCE=5V
BC182
BC183
BC184
IC=10mA, IB=0.5mA
*IC=100mA, IB=5mA
*IC=100mA, IB=5mA
IC=100µA, VCE=5V
IC=2mA, VCE=5V
IC=100mA, VCE=5V
SMALL SIGNAL CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
Transistors Frequency
fT IC=0.5mA, VCE=3V, f=100MHz
BC182
BC183
BC184
Output Capacitance
Input Capacitance
Small Signal Current Gain
IC=10mA, VCE=5V, f=100MHz
Cob VCB=10V, IE=0, f=1MHz
Cib VBE=0.5V, IC=0, f=1MHz
hfe IC=2mA, VCE=5V, f=1KHz
BC182
BC183
BC184
BC182A/BC183A
BC182B/183B/184B
BC183C/184C
Noise Figure
NF IC=0.2mA, VCE=5V, RS=2 kΩ,
f=30Hz to 15KHz
BC184
IC=0.2mA, VCE=5V, RS=2 kΩ,
f=1kHz, F=200Hz
BC182/BC183
BC184
*Pulse Test: Pulse Time 300 µs, Duty Cycle=2%
BC182_184Rev_1 201205E
MIN
40
100
120
120
240
80
80
130
0.55
MIN
150
125
125
240
125
240
450
Continental Device India Limited
Data Sheet
BC182, A, B
BC183, A, B, C
BC184, B, C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
TYP MAX UNITS
500
800
800
0.25
0.60
1.2
0.50
0.70
0.83
V
V
V
V
V
V
TYP MAX UNITS
100 MHz
120 MHz
140 MHz
MHz
5.0 pF
8.0 pF
500
900
900
260
500
900
4.0 dB
10 dB
4.0 dB
Page 2 of 5
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BC183A transistor
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전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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