EMH25FHA 반도체 회로 부품 판매점
Dual digital transistor
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 ROHM Semiconductor |
EMH25 FHA
General purpose (Dual digital transistor)
Datasheet
AEC-Q101 Qualified
Parameter
VCC
IC(MAX.)
R1
R2
DTr1 and DTr2
50V
100mA
4.7kΩ
47kΩ
lFeatures
1)Two DTC143Z chips in a EMT6 package.
2)Mounting possible with EMT3 automatic
mounting machines.
3)Transistor elements are independent,
eliminating interference.
4)Mounting cost and area can be cut in half.
lOutline
SOT-563
SC-107C
EMT6
lInner circuit
lApplication
INVERTER, INTERFACE, DRIVER
lPackaging specifications
Part No.
Package
Package
size
EMH25 FHA
SOT-563
(EMT6) 1616
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
T2R 180
8
8000
H25
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
20161012 - Rev.001
EMH25 FHA
lAbsolute maximum ratings (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCC
VIN
IO
IC(MAX)*1
PD*2*3
Tj
Tstg
Values
50
-5 to 30
100
100
150
150
-55 to +150
Unit
V
V
mA
mA
mW/TOTAL
℃
℃
lElectrical characteristics (Ta = 25°C)
<For DTr1 and DTr2 in common>
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 5mA
IO = 5mA, II = 0.25mA
VI = 5V
VCC = 50V, VI = 0V
VO = 5V, IO = 10mA
-
-
f
*1
T
VCE = 10V, IE = -5mA,
f = 100MHz
*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.
Values
Min. Typ. Max.
- - 0.5
1.3 -
-
- 100 300
- - 1.8
- - 500
80 -
-
3.29 4.7 6.11
8 10 12
Unit
V
mV
mA
nA
-
kΩ
-
- 250 - MHz
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/5
20161012 - Rev.001
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EMH25FHA transistor
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