DTA144TEFRA 반도체 회로 부품 판매점
PNP Digital Transistor
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 ROHM Semiconductor |
DTA144T series
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
Parameter
VCEO
IC
R1
Value
-50V
-100mA
47kΩ
lFeatures
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set
for operation, making the circuit design easy.
5) Complementary NPN Types: DTC144T series
6) Lead Free/RoHS Compliant.
lOutline
VMT3
AEC-Q101 Qualified
E MT3
DTDAT1A4144T4MTMFHA
(SC-105AA)
UMT3
DTDAT1A4144T4ETFERA
SOT-416(SC-75A)
SMT3
DTDAT1A4144T4UTAUFARA
SOT-323(SC-70)
DTDAT1A4144T4KTAKFARA
SOT-346(SC-59)
lInner circuit
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
B: BASE
C: COLLECTOR
E: EMITTER
lPackaging specifications
Part No.
Package
Package
size
DTTAA114444TTMMFHA
DTTAA114444TTEEFRA
DTTAA114444TTUUAAFRA
DTTAA114444TTKKAAFRA
VMT3
EMT3
UMT3
SMT3
1212
1616
2021
2928
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
T2L 180
8
8000
96
TL 180
8
3000
96
T106
180
8
3000
96
T146
180
8
3000
96
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/7
20121023 - Rev.001
DTA144T series
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
DDTTAA114444TTMMFHA
DDTTAA114444TTEEFRA
DDTTAA114444TTUUAAFRA
DDTTAA114444TTKKAAFRA
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1
Tj
Tstg
Values
-50
-50
-5
-100
150
150
200
200
150
-55 to +150
Unit
V
V
V
mA
mW
℃
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = -50μA
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = -50μA
VCB = -50V
VEB = -4V
IC / IB = -5mA / -0.5mA
VCE = -5V, IC = -1mA
-
Transition frequency
f
*2
T
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
-50 -
-V
-50 -
-
-5 -
-
- - -0.5
- - -0.5
- - -0.3
100 250 600
32.9 47 61.1
V
V
μA
μA
V
-
kΩ
- 250 - MHz
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/7
20121023 - Rev.001
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DTA144TEFRA transistor
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