DTA143XUB 반도체 회로 부품 판매점
PNP Digital transistor
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 ROHM Semiconductor |
DTA143X series
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
Datasheet
Parameter
VCC
IC(MAX.)
R1
R2
Value
-50V
-100mA
4.7kΩ
10kΩ
lFeatures
1) Built-In Biasing Resistors, R1 = 4.7kΩ, R2 = 10kΩ
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
for operation, making the circuit design easy.
4) Complementary NPN Types: DTC143X series
lOutline
SOT-723
DTA143XM
(VMT3)
SOT-416
DTA143XE
(EMT3)
SOT-323
SOT-416FL
DTA143XEB
(EMT3F)
SOT-323FL
DTA143XUB
(UMT3F)
SOT-346
lApplication
INVERTER, INTERFACE, DRIVER
lInner circuit
DTA143XM/ DTA143XEB/ DTA143XUB
DTA143XUA
(UMT3)
DTA143XKA
(SMT3)
DTA143XE/ DTA143XUA/ DTA143XKA
lPackaging specifications
Part No.
Package
Package
size
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
DTA143XM SOT-723
1212
T2L
180
8
8000
33
DTA143XEB SOT-416FL 1616
TL
180
8
3000
33
DTA143XE SOT-416
1616
TL
180
8
3000
33
DTA143XUB SOT-323FL 2021
TL
180
8
3000
33
DTA143XUA SOT-323
2021 T106
180
8
3000
33
DTA143XKA SOT-346
2928 T146
180
8
3000
33
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/10
20151001 - Rev.002
DTA143X series
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
Collector current
DTA143XM
DTA143XEB
Power dissipation
DTA143XE
DTA143XUB
DTA143XUA
DTA143XKA
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCC
VIN
IO
IC(MAX)*1
PD*2
Tj
Tstg
Values
-50
-20 to 7
-100
-100
150
150
150
200
200
200
150
-55 to +150
Unit
V
V
mA
mA
mW
℃
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
VCC = -5V, IO = -100μA
VO = -0.3V, IO = -20mA
IO = -10mA, II = -0.5mA
VI = -5V
VCC = -50V, VI = 0V
VO = -5V, IO = -10mA
-
-
Values
Min. Typ. Max.
- - -0.3
-2.5 -
-
- -100 -300
- - -1.8
- - -500
30 -
-
3.29 4.7 6.11
1.7 2.1 2.6
Unit
V
mV
mA
nA
-
kΩ
-
Transition frequency
f
*1
T
VCE = -10V, IE = 5mA,
f = 100MHz
- 250 - MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/10
20151001 - Rev.002
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DTA143XUB transistor
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상호 : 아이지 인터내셔날
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