DTA143TMFHA 반도체 회로 부품 판매점
PNP Digital Transistor
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 ROHM Semiconductor |
DTA143TM FHA
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor)
Datasheet
AEC-Q101 Qualified
Parameter
VCEO
IC
R1
Value
-50V
-100mA
4.7kΩ
lFeatures
1) Built-In Biasing Resistor
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit) .
3) Only the on/off conditions need to be set
for operation, making the circuit design easy.
4) Complementary NPN Types: DTC143TM FHA
lOutline
SOT-723
SC-105AA
(VMT3)
lInner circuit
lApplication
INVERTER, INTERFACE,DRIVER
lPackaging specifications
Part No.
Package
Package
size
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
DTA143TM FHA SOT-723
(VMT3)
1212
T2L
180
8
8000
93
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/4
20161011 - Rev.001
DTA143TM FHA
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Datasheet
Symbol
VCBO
VCEO
VEBO
IC
PD*1
Tj
Tstg
Values
-50
-50
-5
-100
150
150
-55 to +150
Unit
V
V
V
mA
mW
℃
℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Collector-base breakdown
voltage
BVCBO IC = -50μA
Collector-emitter breakdown
voltage
BVCEO IC = -1mA
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R1
IE = -50μA
VCB = -50V
VEB = -4V
IC = -5mA, IB = -0.25mA
VCE = -5V, IC = -1mA
-
Transition frequency
f
*2
T
VCE = -10V, IE = 5mA,
f = 100MHz
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
Values
Unit
Min. Typ. Max.
-50 - - V
-50 - - V
-5 - - V
- - -500 nA
- - -500 nA
- - -300 mV
100 250 600 -
3.29 4.7 6.11 kΩ
- 250 - MHz
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© 2016 ROHM Co., Ltd. All rights reserved.
2/4
20161011 - Rev.001
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DTA143TMFHA transistor
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