KTD525 반도체 회로 부품 판매점
TRIPLE DIFFUSED NPN TRANSISTOR
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 KEC |
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
ᴌLow Collector-Emitter Saturation Voltage.
: VCE(sat)=2.0V(Max.)
ᴌComplementary to KTB595.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Base Current
Collector Power Dissipation (Tc=25ᴱ)
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IE
IB
PC
Tj
Tstg
RATING
100
100
5
5
-5
0.5
40
150
-55ᴕ150
UNIT
V
V
V
A
A
A
W
ᴱ
ᴱ
KTD525
TRIPLE DIFFUSED NPN TRANSISTOR
A
R
S
D
T
L
CC
MM
K
123
J
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
P
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
MILLIMETERS
10.30 MAX
15.30 MAX
0.80
Φ3.60 +_ 0.20
3.00
6.70 MAX
13.60+_ 0.50
5.60 MAX
1.37 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
1.50 MAX
1.50
9.50+_ 0.20
8.00+_ 0.20
2.90 MAX
TO-220AB
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
V(BR)EBO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE
fT
VCB=100V, IE=0
VEB=5V, IC=0
IC=50mA, IB=0
IE=10mA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=4A
IC=4A, IB=0.4A
VCE=5V, IC=1A
VCE=5V, IC=1A
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Note : hFE(1) Classification R:40ᴕ80 , O:70ᴕ140 , Y:120ᴕ240
MIN.
-
-
100
5.0
40
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
12
100
MAX.
100
1.0
-
-
240
-
2.0
1.5
-
-
UNIT
ỌA
mA
V
V
V
V
MHz
pF
1994. 12. 23
Revision No : 0
1/2
KTD525
I C - VCE
5
300 200 150
4
100
3
50
2 IB =20mA
1 COMMON EMITTER
Tc=25 C
0
0
01234567
COLLECTOR-EMITTER VOLTAGE VCE (V)
h FE - I C
200
Tc=75 C
100 Tc=25 C
Tc=-25 C
50
30
COMMON EMITTER
VCE =5V
10
0.01 0.03 0.1
0.3
1
COLLECTOR CURRENT IC (A)
35
SAFE OPERATING AREA
20
10 I C MAX.(PULSED) *
5 (ICCOMNATXIN. UOUS)
3 TcD=2C5OCPERATION
1
* SINGLE
0.5
NONREPETITIVE
PULSE Tc=25 C
0.3
0.1
3
CURVES MUST BE
DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE
5 10
30
50
100
300 500
COLLECTOR-EMITTER VOLTAGE VCE (V)
Pc - Ta
50
Tc=Ta
INFINITE HEAT SINK
40
30
20
10
0
0 25 50 75 100 125 150 175 200
AMBIENT TEMPERATURE Ta ( C)
VCE(sat) - I C
2
COMMON EMITTER
1 IC /IB=10
0.5 Tc=75 C
0.3 Tc=25 C
Tc=-25 C
0.1
0.05
0.01
0.03 0.1
0.3 1
3
COLLECTOR CURRENT IC (A)
10
1994. 12. 23
Revision No : 0
2/2
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KTD525 transistor
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