MRF8S21140HR3 반도체 회로 부품 판매점
RF Power Field Effect Transistors
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 NXP Semiconductors |
Freescale Semiconductor
Technical Data
Document Number: MRF8S21140H
Rev. 0, 5/2010
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies
from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =
970 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
Gps
(dB)
hD Output PAR ACPR
(%)
(dB)
(dBc)
MRF8S21140HR3
MRF8S21140HSR3
2110-2170 MHz, 34 W AVG., 28 V
W-CDMA, LTE
LATERAL N-CHANNEL
RF POWER MOSFETs
2110 MHz
2140 MHz
2170 MHz
17.7 32.1
17.9 31.7
18.1 31.7
6.2 -37.0
6.4 -37.5
6.4 -37.5
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 188 Watts CW (1)
Output Power (3 dB Input Overdrive from Rated Pout)
• Typical Pout @ 1 dB Compression Point ] 126 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465-06, STYLE 1
NI-780
MRF8S21140HR3
CASE 465A-06, STYLE 1
NI-780S
MRF8S21140HSR3
Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (2,3)
CW Operation @ TC = 25°C
Derate above 25°C
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
CW
Value
-0.5, +65
-6.0, +10
32, +0
-65 to +150
150
225
168
0.86
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (3,4)
Unit
Thermal Resistance, Junction to Case
Case Temperature 75°C, 34 W CW, 28 Vdc, IDQ = 970 mA, 2140 MHz
Case Temperature 80°C, 150 W CW(1), 28 Vdc, IDQ = 970 mA, 2140 MHz
RθJC
0.47
0.42
°C/W
ăĂ1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
Ăă2. Continuous use at maximum temperature will affect MTTF.
Ăă3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Ăă4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF8S21140HR3 MRF8S21140HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
2 (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
—
—
10 μAdc
IDSS
—
—
1 μAdc
IGSS
—
—
1 μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
1.0
1.8
2.5 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 970 mAdc)
VGS(Q)
—
2.6
— Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 970 mAdc, Measured in Functional Test)
VGG(Q)
3.8
5.2
6.8 Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on)
0.1
0.18
0.3 Vdc
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 970 mA, Pout = 34 W Avg., f = 2140 MHz,
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps 16.7 17.9 19.7 dB
Drain Efficiency
ηD 29.7 31.7 — %
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR 5.9 6.4 — dB
Adjacent Channel Power Ratio
ACPR
—
-37.5
-36 dBc
Input Return Loss
IRL — -16 -7 dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 970 mA, Pout = 34 W Avg.,
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
hD Output PAR ACPR
(%)
(dB)
(dBc)
IRL
(dB)
2110 MHz
17.7 32.1
6.2
-37.0
-17
2140 MHz
17.9 31.7
6.4
-37.5
-16
2170 MHz
18.1 31.7
6.4
-37.5
-16
ăĂ1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
Ăă2. Part internally matched both on input and output.
(continued)
MRF8S21140HR3 MRF8S21140HSR3
2
RF Device Data
Freescale Semiconductor
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