PZTA14 반도체 회로 부품 판매점
Darlington NPN Silicon Planar Epitaxial Transistor
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 WEITRON |
PZTA14
Darlington NPN Silicon Planar Epitaxial Transistor
P b Lead(Pb)-Free
BASE
1
COLLECTOR
2, 4
3
EMITTER
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
4
SOT-223
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Disspation TA=25˚C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC(DC)
PD
Tj
Tstg
Value
30
30
10
300
2
150
-55 to +150
Unit
V
V
V
mA
W
C
C
Device Marking
PZTA14=A14
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC = 1mA , IB=0)
Symbol Min Max Unit
V(BR)CEO
30
-
V
Collector-Base Breakdown Voltage (IC =100µA , IE=0)
V(BR)CBO
30
-
V
Emitter-Base Breakdown Voltage (IE = 10 µA , IC=0)
V(BR)EBO
10
-
V
Collector-Base Cutoff Current (VCB = 30V)
ICBO
- 100 nA
Emitter-Base Cutoff Current (VEB = 10Vdc , IC=0)
IEBO - 100 nA
NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the
collector lead min. 0.93 inches.2
WEITRON
http://www.weitron.com.tw
1/4
22-Sep-05
PZTA14
ELECTRICALCHARACTERISTICS-Continued (T A = 25 C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(I C =10 mA, VCE = 5 V)
(I C = 100 mA, VCE = 5 V)
Collector-Emitter Saturation Voltage
(I C = 100 mA, I B= 0.1 mA)
Base-Emitter Saturation Voltage
(I C = 100mA, VCE = 5 V)
hFE1 10K
-
-
-
hFE2 20K
-
-
V CE(sat)
-
- 1.5 V
V BE( on)
-
- 2V
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
(I C = 10 mA, VCE = 5V, f = 100 MHz)
fT 125 -
- MHz
WEITRON
http://www.weitron.com.tw
2/4
22-Sep-05
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PZTA14 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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