MJ1800 반도체 회로 부품 판매점
Silicon NPN Power Transistor
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 Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ1800
DESCRIPTION
·High Collector-Emitter Voltage
·Good Linearity of hFE
APPLICATIONS
·Designed for use in vertical deflection amplifier circuits in
television receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
250 V
VCBO
Collector- Base Voltage
500 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
5A
PC Collector Power Dissipation@TC=25℃ 100
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.25
UNIT
℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
MJ1800
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCBO
Collector Cutoff Current
IC= 1mA ; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A; VCE= 5V
hFE-2
DC Current Gain
IC= 0.4A; VCE= 5V
hFE-1/ hFE-2 Gain Linearity
/
MIN TYP. MAX UNIT
250 V
500 V
0.1 mA
35
40 120
0.95
isc website：www.iscsemi.com
2 isc & iscsemi is registered trademark
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PDF 파일 내의 페이지 : 총 2 페이지
제조업체: Inchange Semiconductor
( isc )
MJ1800 transistor
데이터시트 다운로드 :
[ MJ1800.PDF ]
[ MJ1800 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
