NJD2873T4G 반도체 회로 부품 판매점
Power Transistors
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 ON Semiconductor |
NJD2873, NJVNJD2873
Power Transistors
NPN Silicon DPAK For Surface Mount
Applications
Designed for high−gain audio amplifier applications.
Features
• High DC Current Gain
• Low Collector−Emitter Saturation Voltage
• High Current−Gain − Bandwidth Product
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VCB
VCEO
VEB
IC
ICM
IB
PD
50 Vdc
50 Vdc
5 Vdc
2 Adc
3 Adc
0.4 Adc
15 W
0.1 W/°C
Total Device Dissipation
@ TA = 25°C*
Derate above 25°C
PD
1.68 W
0.011
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg − 65 to +175 °C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2013
September, 2016 − Rev. 17
1
www.onsemi.com
SILICON
POWER TRANSISTORS
2 AMPERES
50 VOLTS
15 WATTS
COLLECTOR
2,4
1
BASE
3
EMITTER
4
12
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
AYWW
J
2873G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Device
ORDERING INFORMATION
Device
Package Shipping†
NJD2873T4G
DPAK
2,500
(Pb−Free) Units / Reel
NJVNJD2873T4G
DPAK
2,500
(Pb−Free) Units / Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NJD2873T4/D
NJD2873, NJVNJD2873
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
RqJC
RqJA
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Max
10
89.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 10 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
ON CHARACTERISTICS
IEBO
DC Current Gain (Note 2)
(IC = 0.5 A, VCE = 2 V)
(IC = 2 Adc, VCE = 2 Vdc)
(IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C)
hFE
Min
50
−
−
120
40
80
Max Unit
Vdc
−
nAdc
100
100 nAdc
−
360
−
360
Collector−Emitter Saturation Voltage (Note 2)
(IC = 1 A, IB = 0.05 A)
VCE(sat)
−
Vdc
0.3
Base−Emitter Saturation Voltage (Note 2) (IC = 1 A, IB = 0.05 Adc)
VBE(sat)
−
1.2 Vdc
Base−Emitter On Voltage (Note 2)
(IC = 1 Adc, VCE = 2 Vdc)
(IC = 0.75 Adc, VCE = 1.6 Vdc, −40°C ≤ TJ ≤ 150°C)
DYNAMIC CHARACTERISTICS
VBE(on)
−
−
Vdc
1.2
0.95
Current−Gain − Bandwidth Product (Note 3)
(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT MHz
65 −
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
−
pF
80
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle [ 2%.
3. fT = ⎪hfe⎪• ftest.
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관련 데이터시트
NJD2873T4
NPN Silicon DPAK For Surface Mount Applications - ON Semiconductor
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Power Transistors - ON Semiconductor