AUIRGR4045D 반도체 회로 부품 판매점
INSULATED GATE BIPOLAR TRANSISTOR
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 International Rectifier |
AUTOMOTIVE GRADE
PD - 97637
AUIRGR4045D
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5µs SCSOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free, RoHS Compliant
• Automotive Qualified*
AUIRGU4045D
C
G
E
n-channel
VCES = 600V
IC = 6.0A, TC = 100°C
VCE(on) typ. = 1.7V
C
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
E
G
D-Pak
AUIRGR4045D
E
C
I-Pak G
AUIRGU4045D
G
Gate
C
Colletor
E
Emitter
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
IF@TC=25°C
IF@TC=100°C
IFM
VGE
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
cPulsed Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC =25°
PD @ TC =100°
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
eRθJC Junction-to-Case - IGBT
eRθJC Junction-to-Case - Diode
gRθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Max.
600
12
6.0
18
24
8.0
4.0
24
± 20
± 30
77
39
-55 to + 175
Units
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
Max.
1.9
6.8
50
110
Units
°C/W
*Qualification standards can be found at http://www.irf.com/
1
www.irf.com
02/14/11
AUIRGR/U4045D
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Min.
600
—
Typ.
—
0.36
Max. Units Conditions
f— V VGE = 0V, Ic =100 µA
f— V/°C VGE = 0V, Ic = 250µA ( 25 -175 oC )
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.7 2.0
— 2.07 —
IC = 6.0A, VGE = 15V, TJ = 25°C
V IC = 6.0A, VGE = 15V, TJ = 150°C
VGE(th)
∆VGE(th)/∆TJ
Gate Threshold Voltage
Threshold Voltage temp. coefficient
— 2.14 —
IC = 6.0A, VGE = 15V, TJ = 175°C
3.5 — 6.5 V VCE = VGE, IC = 150µA
— -13 — mV/°C VCE = VGE, IC = 250µA ( 25 -175 oC )
gfe Forward Transconductance
— 5.8 —
S VCE = 25V, IC = 6.0A, PW =80µs
ICES Collector-to-Emitter Leakage Current — — 25 µA VGE = 0V,VCE = 600V
— — 250
VGE = 0V, VCE = 600V, TJ =175°C
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
— 1.60 2.30 V IF = 6.0A
— 1.30 —
IF = 6.0A, TJ = 175°C
— — ±100 nA VGE = ± 20 V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge (turn-on)
— 13 19.5
IC = 6.0A
Qge Gate-to-Emitter Charge (turn-on)
— 3.1 4.65 nC VCC = 400V
Qgc Gate-to-Collector Charge (turn-on)
— 6.4 9.6
VGE = 15V
Eon Turn-On Switching Loss
— 56 86
IC = 6.0A, VCC = 400V, VGE = 15V
Eoff Turn-Off Switching Loss
— 122 143 µJ RG = 47Ω, L=1mH, LS= 150nH, TJ = 25°C
Etotal
Total Switching Loss
— 178 229
Energy losses include tail and diode reverse recovery
td(on)
Turn-On delay time
— 27 35
IC = 6.0A, VCC = 400V
tr Rise time
— 11 15 ns RG = 47Ω, L=1mH, LS= 150nH
td(off)
Turn-Off delay time
— 75 93
TJ = 25°C
tf Fall time
— 17 22
Eon Turn-On Switching Loss
— 140 —
IC = 6.0A, VCC = 400V, VGE = 15V
Eoff Turn-Off Switching Loss
— 189 — µJ RG = 47Ω, L=1mH, LS= 150nH, TJ = 175°C
Etotal
Total Switching Loss
— 329 —
Energy losses include tail and diode reverse recovery
td(on)
Turn-On delay time
— 26 —
IC = 6.0A, VCC = 400V
tr Rise time
— 12 — ns RG = 47Ω, L=1mH, LS= 150nH
td(off)
Turn-Off delay time
— 95 —
TJ = 175°C
tf Fall time
— 32 —
Cies Input Capacitance
Coes Output Capacitance
— 350 —
— 29 —
VGE = 0V
pF VCC = 30V
Cres Reverse Transfer Capacitance
— 10 —
f = 1Mhz
TJ = 175°C, IC = 24A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 500V, Vp =600V
RG = 100Ω, VGE = +20V to 0V
SCSOA
Erec
trr
Short Circuit Safe Operating Area
Reverse recovery energy of the diode
Diode Reverse recovery time
—5—
— 178 —
— 74 —
µs VCC = 400V, Vp =600V
RG = 100Ω, VGE = +15V to 0V
µJ TJ = 175oC
ns VCC = 400V, IF = 6.0A
Irr Peak Reverse Recovery Current
— 12 —
A VGE = 15V, Rg = 47Ω, L=1mH, LS=150nH
Notes:
VCC = 80% (VCES), VGE = 15V, L = 1.0mH, RG = 47Ω.
Pulse width limited by max. junction temperature.
Rθ is measured at TJ approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended
footprint and soldering techniques refer to application note #AN-994.
Ref.Fig
CT6
5,6,7,9,
10 ,11
9,10,11,12
8
Ref.Fig
24
CT1
CT4
CT4
13,15
CT4
WF1,WF2
14,16
CT4
WF1,WF2
23
4
CT2
22
CT3, WF4
17,18,19
20,21
WF3
2 www.irf.com
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AUIRGR4045D transistor
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