ISL73128EH 반도체 회로 부품 판매점
Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays
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 Intersil |
Radiation Hardened Ultra High Frequency NPN/PNP
Transistor Arrays
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH,
ISL73128EH
The ISL73096, ISL73127 and ISL73128 are radiation
hardened bipolar transistor arrays. The ISL73096 consists of
three NPN transistors and two PNP transistors on a common
substrate. The ISL73127 consists of five NPN transistors on a
common substrate. The ISL73128 consists of five PNP
transistors on a common substrate.
The ISL73096EH, ISL73127EH and ISL73128EH devices
encompass all of the production testing of the ISL73096RH,
ISL73127RH and ISL73128RH devices and additionally are
tested in the Intersil Enhanced Low Dose Rate Sensitivity
(ELDERS) product manufacturing flow.
One of our bonded wafer, dielectrically isolated fabrication
processes provides an immunity to single event latch-up and
the capability of highly reliable performance in a radiation
environment.
The high gain-bandwidth product and low noise figure of these
transistors make them ideal for use in high frequency
amplifier and mixer applications. Monolithic construction of
the NPN and PNP transistors provides the closest electrical
and thermal matching possible. Access is provided to each
terminal of the transistors for maximum application flexibility.
Features
• Electrically screened to SMD # 5962-07218
• QML qualified per MIL-PRF-38535 requirements
• Radiation tolerance
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*
- SEL immune . . . . . . . . . . Bonded wafer dielectric isolation
• NPN gain bandwidth product (FT) . . . . . . . . . . . . . . 8GHz (typ)
• NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130 (typ)
• NPN early voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . . . 50V (typ)
• PNP gain bandwidth product (FT). . . . . . . . . . . . . 5.5GHz (typ)
• PNP current gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . . 60 (typ)
• PNP early voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . . . 20V (typ)
• Noise figure (50) at 1GHz. . . . . . . . . . . . . . . . . . . 3.5dB (typ)
• Collector-to-collector leakage . . . . . . . . . . . . . . . . . . <1pA (typ)
• Complete isolation between transistors
* Limit established by characterization.
Related Literature
Applications
• AN1503, Amplifier Design Using ISL73096RH,
ISL73127RH, ISL73128RH Transistor Arrays
• TID REPORT for the Radiation Hardened UHF NPN/PNP
transistor array
• High frequency amplifiers and mixers
• High frequency converters
• Synchronous detector
120
115
110
105
100
95
90
85
80 0
50 100 150 200 250 300
krad(Si)
FIGURE 1. NPN BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE
(HDR) TO 300krads(Si)
75
70
65
60
55
50
45
40
0 50 100 150 200 250 300
krad(Si)
FIGURE 2. PNP BETA OVER TOTAL IONIZING DOSE (TID) FOR LOW
DOSE RATE (LDR) TO 50krads(Si) AND HIGH DOSE RATE
(HDR) TO 300krads(Si)
June 27, 2014
FN6475.4
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2007, 2009, 2012, 2014. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
ISL73096RH, ISL73127RH, ISL73128RH, ISL73096EH, ISL73127EH, ISL73128EH
Typical Applications
VCC
+
-
R1
39kΩ
C1 1nF
RS
50Ω
R2
100Ω
C2 1nF
R3
39kΩ
Q5
R4
100Ω
C3 1nF
VO
Q2
RL
50Ω
+-
VS
FIGURE 3. HIGH-GAIN, LOW-NOISE AMPLIFIER MADE FROM ISL73127
R1
2kΩ
Q5
R2
15kΩ
R4
100Ω
+
-
VEE
Q4
R3
1kΩ
C2
1nF
RS
50Ω
RF
240Ω
C1
1nF
+-
VS
L1
1µH
VO
C3
1nF
Q2
RL
50Ω
RE
5.1Ω
FIGURE 4. WIDEBAND AMPLIFIER MADE FROM ISL73096
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FN6475.4
June 27, 2014
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ISL73128EH transistor
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