2SA1442 반도체 회로 부품 판매점
Silicon PNP Power Transistor
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 Inchange Semiconductor |
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1442
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -60V(Min)
·High DC Current Gain-
: hFE= 100(Min)@ (VCE= -2V , IC= -1.5A)
·Low Saturation Voltage-
: VCE(sat)= -0.3V(Max)@ (IC= -4A, IB= -0.2A)
APPLICATIONS
·This type of power transistor is developed for high-speed
switching and features a high hFE at low VCE(sat),which is
ideal for use as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-7.0 V
IC Collector Current-Continuous
-7.0 A
ICM Collector Current-Pulse
-14 A
IB Base Current-Continuous
-3.5 A
Total Power Dissipation @TC=25℃
30
PT
Total Power Dissipation @Ta=25℃
2.0
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55~150 ℃
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1442
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
VCEX(SUS)
VCE(sat)-1
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
IC= -4.0A ; IB= -0.4A, L= 1mH
IC= -4.0A ; IB1=-IB2= -0.4A,
VBE(OFF)=1.5V, L=180μ H,clamped
IC= -4A; IB= -0.2A
-60
-60
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= -4A; IB= -0.2A
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= -6A; IB= -0.3A
ICBO Collector Cutoff Current
VCB= -60V ; IE=0
ICER Collector Cutoff Current
ICEX Collector Cutoff Current
IEBO Emitter Cutoff Current
VCE= -60V ; RBE= 50Ω ,Ta=125℃
VCE= -60V; VBE(off)= -1.5V
VCE= -60V; VBE(off)= -1.5V,Ta=125℃
VEB= -5V; IC= 0
V
V
-0.3 V
-0.5 V
-1.2 V
-1.5 V
-10 μ A
-1.0 mA
-10 μ A
-1.0 mA
-10 μ A
hFE-1
DC Current Gain
IC= -0.7A ; VCE= -2V
100
hFE-2
DC Current Gain
IC= -1.5A ; VCE= -2V
100 400
hFE-3
DC Current Gain
IC= -4.0A ; VCE= -2V
60
COB Output Capacitance
IE=0; VCB= -10V;f= 1.0MHz
fT Current-Gain—Bandwidth Product IC=-1A ; VCE= -10V
180 pF
40 MHz
Switching times
ton Turn-on Time
tstg Storage Time
tf Fall Time
IC= -4.0A ,RL= 12.5Ω ,
IB1= -IB2= -0.2A,VCC≈-50V
0.3 μ s
1.5 μ s
0.3 μ s
hFE-2 Classifications
ML K
100-200 150-300 200-400
isc website：www.iscsemi.cn
2 isc & iscsemi is registered trademark
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2SA1442 transistor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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