KTC3227 반도체 회로 부품 판매점
EPITAXIAL PLANAR NPN TRANSISTOR
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 KEC |
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
ᴌComplementary to KTA1274.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
RATING
80
80
5
400
-400
1
150
-55ᴕ150
UNIT
V
V
V
mA
mA
W
ᴱ
ᴱ
KTC3227
EPITAXIAL PLANAR NPN TRANSISTOR
BD
P
DEPTH:0.2
C
Q
K
FF
HH
M EM
123
HL
NN
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
S C 0.60 MAX
D 2.50 MAX
E 1.15 MAX
F 1.27
G 1.70 MAX
H 0.55 MAX
J 14.00+_ 0.50
H
K
L
0.35 MIN
0.75+_ 0.10
M4
N 25
O 1.25
P Φ1.50
Q 0.10 MAX
R 12.50 +_ 0.50
S 1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter-Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
V(BR)CEO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE
fT
Collector Output Capacitance
Cob
Note : hFE Classification O:70~140, Y:120~240.
TEST CONDITION
VCB=50V, IE=0
VEB=5V, IC=0
IC=5mA, IB=0
VCE=2V, IC=50mA
VCE=2V, IC=200mA
IC=200mA, IB=20mA
VCE=2V, IC=5mA
VCE=10V, IC=10mA
VCB=10V, IE=0, f=1MHz
MIN.
-
-
80
70
40
-
0.55
-
-
TYP.
-
-
-
-
-
-
-
100
10
MAX.
100
100
-
240
-
0.4
0.8
-
-
UNIT
nA
nA
V
V
V
MHz
pF
1994. 5. 11
Revision No : 0
1/2
KTC3227
I C - VCE
320 3.5 3.0
280 2.5
2.0
240
200 1.5
COMMON
EMITTER
Ta=25 C
160 1.0
120
80 I B=0.5mA
40
0
0
012345678
COLLECTOR-EMITTER VOLTAGE VCE (V)
1k
COMMON
EMITTER
500 VCE =2V
300
100
hFE - I C
Ta=100 C
Ta=25 C
Ta=-25 C
50
30
1
3 5 10
30 100
COLLECTOR CURRENT IC (mA)
500
1
COMMON
0.5 EMITTER
0.3 IC /IB=10
VCE(sat) - I C
Ta=100 C
0.1
0.05 Ta=25 C
Ta=-25 C
0.03
0.01
1
3 5 10
30 100
COLLECTOR CURRENT IC (mA)
500
Pc - Ta
3.5
1 Tc=Ta
3.0 2 Ta=25 C
2.5
1
2.0
1.5
2
1.0
0.5
0
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
1994. 5. 11
Revision No : 0
300
COMMON
250 EMITTER
VCE =2V
200
I C - VBE
150
100
50
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
2k
1k IC MAX.(PULSED) *
500
300
100
50
30
IC
*
MAX.(CONTINUOUS)
DC
SINGLE
OPERATION(Ta=25
NONREPETITIVE
C)
100m10SmS
*
*
PULSE
Ta=25 C
10 CURVES MUST BE DERATED
5
LINEARLY WITH INCREASE
IN TEMPERATURE
3
0.5 1
3 5 10
30 100 200
COLLECTOR-EMITTER VOLTAGE VCE (V)
2/2
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KTC3227 transistor
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전화번호 : 051-319-2877
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