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Isahaya Electronics Corporation |
PRELIMINARY
RT3AMMM
Composite Transistor
For Low Frequency Amplify Application
Silicon Pnp Epitaxial Type
DESCRIPTION
RT3AMMM is a composite transistor built with two
2SA1235A chips in SC-88 package.
FEATURE
Silicon pnp epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
For low frequency amplify application
OUTLINE DRAWING
2.1
1.25
①
②
③
⑥
⑤
④
Unit:mm
TERMINAL
CONNECTOR
①:EMITTER1
Tr1 ②:BASE1
③:COLLECTOR2
Tr2 ④:EMITTER2
⑤:BASE2
⑥:COLLECTOR1
JEITA:SC-88
MAXIMUM RATING (Ta=25℃)
SYMBOL
VCBO
VEBO
VCEO
IC
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Total,Ta=25℃)
Junction temperature
Storage temperature
RATING
-60
-6
-50
-200
150
+125
-55~+125
UNIT
V
V
V
mA
mW
℃
℃
MARKING
6 54
.AMM
123
ISAHAYA ELECTRONICS CORPORATION
PRELIMINARY
RT3AMMM
Composite Transistor
For Low Frequency Amplify Application
Silicon Pnp Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
Parameter
V(BR)CEO
ICBO
IEBO
hFE*
hFE
VCE(sat)
fT
Cob
NF
Collector to Emitter break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
Noise figure
* : It shows hFE classification in right table.
Test conditions
IC=100μA,RBE=∞
VCB =-60V,IE=0
VEB=-6V,IC=0
VCE=-6V,IC=-1mA
VCE=-6V,IC=-0.1mA
IC=-100mA,IB=-10mA
VCE=-6V,IE=10mA
VCB=-6V,IE=0,f=1MHZ
VCE=6V,IE=0.3mA,f=100HZ,RG=10kΩ
Limits
Min Typ
-50 -
--
--
150 -
90 -
--
- 200
- 4.0
--
item
hFE
E
150~300
Max
-
-0.1
-0.1
500
-
-0.3
-
-
20
Unit
V
μA
μA
-
-
V
MHZ
pF
dB
F
250~500
ISAHAYA ELECTRONICS CORPORATION
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