VS-ST223C04CFN0 반도체 회로 부품 판매점
Inverter Grade Thyristors
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 Vishay |
www.vishay.com
VS-ST223C..C Series
Vishay Semiconductors
Inverter Grade Thyristors
(Hockey PUK Version), 390 A
TO-200AB (A-PUK)
PRODUCT SUMMARY
Package
Diode variation
IT(AV)
VDRM/VRRM
VTM
ITSM at 50 Hz
ITSM at 60 Hz
IGT
TC/Ths
TO-200AB (A-PUK)
Single SCR
390 A
400 V, 800 V
1.58 V
5260 A
5510 A
200 mA
55 °C
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case TO-200AB (A-PUK)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
Ths
Ths
50 Hz
60 Hz
50 Hz
60 Hz
Range
VALUES
390
55
745
25
5850
6130
171
156
400 to 800
10 to 30
-40 to +125
UNITS
A
°C
A
°C
A
kA2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VS-ST223C..C
04
08
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
400
800
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
40
Revision: 02-Jun-15
1 Document Number: 93672
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-ST223C..C Series
Vishay Semiconductors
CURRENT CARRYING CAPABILITY
FREQUENCY
50 Hz
400 Hz
1000 Hz
2500 Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
Heatsink temperature
Equivalent values for RC circuit
ITM
180° el
930 800
910 770
780 650
490 400
50
VDRM
50
40 55
47/0.22
ITM
180° el
1430
1220
1490
1300
1430
1260
1070
920
50
VDRM
-
40 55
47/0.22
ITM
100 µs
5870
5240
3120
2740
1880
1640
1000
860
50
VDRM
-
40 55
47/0.22
UNITS
A
V
A/μs
°C
μF
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
Maximum peak, one half cycle,
non-repetitive surge current
SYMBOL
IT(AV)
IT(RMS)
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Maximum peak on-state voltage
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level value of forward slope
resistance
Maximum holding current
Typical latching current
I2t
VTM
VT(TO)1
VT(TO)2
rt1
rt2
IH
IL
TEST CONDITIONS
VALUES UNITS
180° conduction, half sine wave
Double side (single side) cooled
390 (150)
55 (85)
A
°C
DC at 25 °C heatsink temperature double side cooled
745
t = 10 ms
t = 8.3 ms
No voltage
reapplied
5850
6130
A
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
100 % VRRM
reapplied
4920
5150
171
156
121
110
kA2s
t = 0.1 to 10 ms, no voltage reapplied
1710 kA2s
ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
1.58
1.05
1.09
0.88
0.82
V
m
TJ = 25 °C, IT > 30 A
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
600
1000
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate
of rise of turned on current
Typical delay time
Maximum turn-off time
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
VALUES
UNITS
MIN. MAX.
TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt
1000
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
TJ = TJ maximum,
ITM = 300 A, commutating dI/dt = 20 A/μs
VR = 50 V, tp = 500 μs, dV/dt: See table in device code
0.78
10 30
A/μs
μs
Revision: 02-Jun-15
2 Document Number: 93672
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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VS-ST223C04CFN0 thyristor
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