T720N 반도체 회로 부품 판매점
Phase Control Thyristor
|
|
 Infineon |
N Datenblatt / Data sheet
Netz-Thyristor
Phase Control Thyristor
T720N
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
PreepreeiotnidtiivnsecdhpaeetaVekonrfworäwrtasr-duonfdf-sRtaütcekawnädrtsre-Svepritszeenvsoplteargresspannung Tvj = -40°C... Tvj max
Elektrische EigenschaftenVorwärts-Stossspitzensperrspannung
Tvj = -40°C... Tvj max
non-repetitive peak forward off-state voltage
Rückwärts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
Tvj = +25°C... Tvj max
Durchlassstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
TC = 85 °C
Dauergrenzstrom
average on-state current
TC = 55 °C, θ = 180°sin, tP = 10 ms
Durchlaßstrom-Effektivwert
RMS on-state current
Stossstrom-Grenzwert
surge current
Tvj = 25 °C °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
DIN IEC 60747-6
f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Tvj = Tvj max, vD = 0,67 VDRM
5.Kennbuchstabe / 5th letter F
VDRM,VRRM 1200
1400
VDSM
1200
1400
VRSM
1300
1500
ITRMSM
ITAVM
ITAVM
ITRMS
ITSM
I²t
(diT/dt)cr
(dvD/dt)cr
1600 V
1800 V
1600 V
1800 V
1700 V
1900 V
1500 A
720 A
1050 A
1650 A
14500 A
12500 A
1051 10³ A²s
781 10³ A²s
120 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlasskennlinie 300 A ≤ iT ≤ 3500 A
on-state characteristic
v T = A + B ⋅ iT + C ⋅ ln (iT + 1) + D ⋅
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
iT
Tvj = Tvj max, iT = 3000 A
Tvj = Tvj max, iT = 750 A
Tvj = Tvj max
vT
V(TO)
Tvj = Tvj max
rT
Tvj = Tvj max
Tvj = 25 °C, vD = 12V
A=
B=
C=
D=
IGT
Tvj = 25 °C, vD = 12V
VGT
Tvj = Tvj max, vD = 12V
Tvj = Tvj max, vD = 0,5 VDRM
Tvj = Tvj max, vD = 0,5 VDRM
IGD
VGD
Tvj = 25°C, vD = 12V
IH
Tvj = 25°C, vD = 12V, RGK ≥ 10 Ω
iGM = 1 A, diG/dt = 1 A/µs, tg = 20 µs
Tvj = Tvj max
vD = VDRM, vR = VRRM
DIN IEC 60747-6
Tvj = 25 °C, iGM = 1 A, diG/dt = 1 A/µs
IL
iD, iR
tgd
max.
max.
1,94 V
1,20 V
0,85 V
0,35 mΩ
1,173E+00
1,489E-04
-9,456E-02
1,966E-02
max. 250 mA
max.
max.
max.
max.
1,5 V
10 mA
5 mA
0,2 V
max. 300 mA
max. 1500 mA
max. 80 mA
max.
4 µs
prepared by: H.Sandmann
approved by: M.Leifeld
IFBIP D AEC / 2008-10-13, H.Sandmann
date of publication: 2008-10-13
revision:
1.0
A 56/08
Seite/page 1/10
N Datenblatt / Data sheet
Netz-Thyristor
Phase Control Thyristor
T720N
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Freiwerdezeit
circuit commutated turn-off time
Thermische EigenschaftenTvj = Tvj max, iTM = ITAVM
vRM = 100 V, vDM = 0,67 VDRM
Mechanische EigenschaftendvD/dt = 20 V/µs, -diT/dt = 10 A/µs
4.Kennbuchstabe / 4th letter O
tq
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
Kühlfläche / cooling surface
beidseitig / two-sided, θ = 180°sin
beidseitig / two-sided, DC
Anode / anode, θ = 180°sin
Anode / anode, DC
Kathode / cathode, θ = 180°sin
Kathode / cathode, DC
Kühlfläche / cooling surface
beidseitig / two-sides
einseitig / single-sides
RthJC
RthCH
Tvj max
Tc op
Tstg
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see annex
Si-Element mit Druckkontakt
Si-pellet with pressure contact
Anpresskraft
clamping force
Steueranschlüsse
control terminals
Gewicht
weight
Kriechstrecke
creepage distance
Schwingfestigkeit
vibration resistance
F
Gate (flat)
Gate (round, based on AMP 60598)
Kathode / cathode
G
f = 50 Hz
typ. 250 µs
max.
max.
max.
max.
max.
max.
0,038 °C/W
0,036 °C/W
0,068 °C/W
0,065 °C/W
0,082 °C/W
0,080 °C/W
max.
max.
0,005 °C/W
0,010 °C/W
125 °C
-40...+125 °C
-40...+150 °C
Seite 3
page 3
9...18 kN
A 2,8x0,5
Ø 1,5
A 4,8x0,5
typ. 270
mm
mm
mm
g
20 mm
50 m/s²
IFBIP D AEC / 2008-10-13, H.Sandmann
A 56/08
Seite/page 2/10
|
PDF 파일 내의 페이지 : 총 10 페이지
제조업체: Infineon
( infineon )
T720N thyristor
데이터시트 다운로드 :
[ T720N.PDF ]
[ T720N 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
T720
Phase Control SCR - Powerex Power Semiconductors
T720N
Phase Control Thyristor - Infineon