SM12J48A 반도체 회로 부품 판매점
BI-DIRECTIONAL TRIODE THYRISTOR
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 Toshiba |
SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM12G48,USM12G48,SM12J48,USM12J48
SM12G48A,USM12G48A,SM12J48A,USM12J48A
AC POWER CONTROL APPLICATIONS
l Repetitive Peak Off-State Voltage : VDRM=400, 600V
l R.M.S. On-State Current
: IT (RMS) =12A
l Gate Trigger Current
: IGT=30mA Max.
: IGT=20mA Max. (“A”Type)
SM12G48, SM12J48, SM12G48A, SM12J48A
Unit in mm
USM12G48, USM12J48, USM12G48A, USM12J48A
JEDEC
JEITA
TOSHIBA
MARKING
―
―
13-10J1A
JEDEC
JEITA
TOSHIBA
―
―
13-10J2A
Weight : 1.7g
NUMBER
*1
*2
SYMBOL
TYPE
SM12G48, SM12G48A, USM12G48, USM12G48A
SM12J48, SM12J48A, USM12J48, USM12J48A
SM12G48A,SM12J48A,USM12G48A,USM12J48A
*3
MARK
SM12G48
SM12J48
A
Example
8A : January 1998
8B : February 1998
8L : December 1998
1 2001-07-13
SM12(G,J)48,USM12(G,J)48,SM12(G,J)48A,USM12(G,J)48A
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
Off-State Voltage
(U)SM12G48
(U)SM12G48A
(U)SM12J48
(U)SM12J48A
R.M.S On-State Current
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I2t Limit Value
Critical Rate of Rise of
On-State Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
SYMBOL
VDRM
IT (RMS)
ITSM
I2t
di /dt
PGM
PG (AV)
VGM
IGM
Tj
Tstg
RATING
400
600
12
120 (50Hz)
132 (60Hz)
72
50
5
0.5
10
2
−40~125
−40~125
UNIT
V
A
A
A2s
A / ms
W
W
V
A
°C
°C
Note 1 :
VDRM=0.5×Rated
ITM≤15A
tgw≥10ms
tgr≤250ns
igp=IGT×2.0
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Repetitive Peak Off-State Current
I
Gate Trigger Voltage
II
III
IV
I
SM12G48
SM12J48
II
III
Gate Trigger
Current
IV
I
SM12G48A
SM12J48A
II
III
IV
Peak On-State Voltage
Gate Non-Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of
Off-State Voltage
(U)SM12G48
(U)SM12J48
(U)SM12G48A
(U)SM12J48A
Critical Rate of Rise of
Off-State Voltage at
Commutation
(U)SM12G48
(U)SM12J48
(U)SM12G48A
(U)SM12J48A
SYMBOL
IDRM
VGT
IGT
VTM
VGD
IH
Rth (j-c)
dv / dt
TEST CONDITION
VDRM=Rated
T2 (+) , Gate (+)
VD=12V
RL=20W
T2 (+) , Gate (-)
T2 (-) , Gate (-)
T2 (-) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (-)
T2 (-) , Gate (-)
VD=12V
RL=20W
T2 (-) , Gate (+)
T2 (+) , Gate (+)
T2 (+) , Gate (-)
T2 (-) , Gate (-)
T2 (-) , Gate (+)
ITM=17A
VD=Rated, Tc=125°C
VD=12V, ITM=1A
Junction to Case, AC
VDRM=Rated, Tj=125°C
Exponential Rise
MIN.
―
―
―
―
―
―
―
―
―
―
―
―
―
―
0.2
―
―
―
―
TYP. MAX. UNIT
― 20 mA
― 1.5
― 1.5
V
― 1.5
――
― 30
― 30
― 30
――
mA
― 20
― 20
― 20
――
― 1.5 V
―― V
― 50 mA
― 2.4 °C / W
300 ―
V / ms
200 ―
(dv / dt) c
VDRM=400V, Tj=125°C
(di / dt) c=−6.5A / ms
10 ― ―
V / ms
4 ――
2 2001-07-13
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SM12J48A thyristor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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전력반도체 문의 : 010-3582-2743
관련 데이터시트
SM12J48
BI-DIRECTIONAL TRIODE THYRISTOR - Toshiba
SM12J48A
BI-DIRECTIONAL TRIODE THYRISTOR - Toshiba