S4X8ES1 반도체 회로 부품 판매점
Thyristors
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 Littelfuse |
SxX8xSx Series
Teccor® brand Thyristors
EV Series 0.8 Amp Sensitive SCRs
Description
New device series offers high static dv/dt and lower turn
off (tq) sensitive SCR with its small die planar construction
design. It is specifically designed for GFCI (Ground Fault
Circuit Interrupter) and Gas Ignition applications. All
SCRs junctions are glass-passivated to ensure long term
reliability and parametric stability.
Main Features
Symbol
IT(RMS)
VDRM / VRRM
I
GT
Value
0.8
400 to 800
5 to 200
Unit
A
V
μA
Applications
The SxX8xSx EV series is specifically designed for
GFCI (Ground Fault Circuit Interrupter) and gas ignition
applications.
Features
t3P)4DPNQMJBOUBOE
Halogen-Free
t5ISVIPMFBOETVSGBDF
mount packages
t4VSHFDVSSFOU
capability > 10Amps
t#MPDLJOHWPMUBHF
( VDRM / VRRM )
capability - up to 800V
Schematic Symbol
t)JHIEWEUOPJTFJNNVOJUZ
t*NQSPWFEUVSOPGGUJNF Uq)
< 25 μsec
t4 FOTJUJWFHBUFGPSEJSFDU
microprocessor interface
A
G
K
Absolute Maximum Ratings
Symbol
Parameter
IT(RMS)
RMS on-state current (full sine wave)
I Average on-state current
T(AV)
ITSM
Non repetitive surge peak on-state current
(Single cycle, TJ initial = 25°C)
I2t I2t Value for fusing
di/dt
IGM
PG(AV)
Tstg
TJ
SxX8xSx Series
Critical rate of rise of on-state current IG = 10mA
Peak Gate Current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
199
TO-92
SOT-89
SOT-223
TO-92
SOT-89
SOT-223
TO-92
SOT-89
SOT-223
tp = 10 ms
tp = 8.3 ms
TO-92
SOT-89
SOT-223
tp = 10 μs
—
—
—
TC = 55°C
TC = 60°C
TL = 60°C
T = 55°C
C
T = 60°C
C
T = 60°C
L
F= 50Hz
F= 60Hz
F = 50 Hz
F = 60 Hz
Value
0.8
0.8
0.8
0.51
0.51
0.51
8
10
0.32
0.41
Unit
A
A
A
A
A
A
A
A
A2s
A2s
TJ = 125°C
TJ = 125°C
TJ = 125°C
—
—
50
1.0
0.1
-40 to 150
-40 to 125
A/μs
A
W
°C
°C
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 09/23/13
Teccor® brand Thyristors
EV Series 0.8 Amp Sensitive SCRs
Electrical Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Description
Test Conditions
IGT
VGT
VGRM
I
H
(dv/dt)s
DC Gate Trigger Current
DC Gate Trigger Voltage
Peak Reverse Gate Voltage
Holding Current
Critical Rate-of-Rise of
Off-State Voltage
VGD Gate Non-Trigger Voltage
tq Turn-Off Time
tgt Turn-On Time
Note: x = voltage, y = package
VD = 6V
R
L
=
100
:
VD = 6V
RL = 100 :
IRG = 10μA
RGK = 1 KΩ
Initial Current = 20mA
TJ = 125°C
V = V /V
D DRM RRM
Exp. Waveform
R
GK
=1
k:
V =V
D DRM
RGK =1 k:
T = 25°C
J
TJ = 25°C @ 600 V
R
GK
=1
k:
I =10mA
G
PW = 15μsec
I = 1.6A(pk)
T
Limit
MIN.
MAX.
MAX.
MIN.
MAX.
MIN.
MIN.
MAX.
TYP.
Value
SxX8yS1 SxX8yS2
0.5 1
5 50
SxX8yS
15
200
0.8
5
5
75
0.2
30 25 25
2.0 2.0 2.0
Unit
μA
μA
V
V
mA
V/μs
V
μs
μs
Static Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
VTM
IDRM
Description
Peak On-State Voltage
Off-State Current, Peak Repetitive
Test Conditions
ITM = 1.6A (pk)
TJ = 25°C @ VD = VDRM
RGK =1 k:
TJ = 125°C @ VD = VDRM
RGK =1 k:
Limit
MAX.
MAX.
MAX.
Value
1.70
3
500
Unit
V
μA
μA
Thermal Resistances
Symbol
Description
Rth(j-c)
Junction to case (AC)
Rth(j-a)
Junction to ambient
1 60Hz AC resistive load condition, 100% conduction.
Test Conditions
TO-92
IT
=
0.8A
1
(RMS)
SOT-223
SOT-89
TO-92
I = 0.8A 1
T (RMS)
SOT-223
SOT-89
Value
75
30
50
150
60
90
Unit
°C/ W
°C/ W
°C/ W
°C/ W
°C/ W
°C/ W
SxX8xSx Series
200 ©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Revised: 09/23/13
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S4X8ES1 thyristor
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