VS-ST180S08P0PBF 반도체 회로 부품 판매점
Phase Control Thyristors
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 Vishay |
www.vishay.com
VS-ST180SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 200 A
TO-209AB (TO-93)
PRODUCT SUMMARY
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
Package
200 A
400 V,800 V, 1200 V, 1600 V, 2000 V
1.75 V
150 mA
-40 °C to 125 °C
TO-209AB (TO-93)
Diode variation
Single SCR
FEATURES
• Center amplifying gate
• International standard case TO-209AB (TO-93)
• Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to
1200 V)
• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Typical
VALUES
200
85
314
5000
5230
125
114
400 to 2000
100
-40 to 125
UNITS
A
°C
A
A
kA2s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
04 400
08 800
VS-ST180S
12
1200
16 1600
20 2000
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
900
1300
1700
2100
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
30
Revision: 11-Mar-14
1 Document Number: 94397
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-ST180SPbF Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Maximum (typical) latching current
I2t
VT(TO)1
VT(TO)2
rt1
rt2
VTM
IH
IL
TEST CONDITIONS
180° conduction, half sine wave
DC at 76 °C case temperature
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
(I > x IT(AV)), TJ = TJ maximum
Ipk = 570 A, TJ = 125 °C, tp = 10 ms sine pulse
TJ = TJ maximum, anode supply 12 V resistive load
VALUES UNITS
200 A
85 °C
314
5000
5230
A
4200
4400
125
114
kA2s
88
81
1250
kA2s
1.08
V
1.14
1.18
m
1.14
1.75 V
600
1000 (300)
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
td
tq
TEST CONDITIONS
Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
VALUES
1000
1.0
100
UNITS
A/μs
μs
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
IRRM,
IDRM
TEST CONDITIONS
TJ = TJ maximum linear to 80 % rated VDRM
TJ = TJ maximum, rated VDRM/VRRM applied
VALUES UNITS
500 V/μs
30 mA
Revision: 11-Mar-14
2 Document Number: 94397
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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VS-ST180S08P0PBF thyristor
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전화번호 : 051-319-2877
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