TB0900H 반도체 회로 부품 판매점
(TB0640H - TB3500H) SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
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 Lite-On |
LITE-ON
SEMICONDUCTOR
SURFACE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
FEATURES
Oxide Glass Passivated Junction
Bidirectional protection in a single device
Surge capabilities up to 100A @ 10/1000us or 400 @
8/20us
High off state Impedance and low on state voltage
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Denotes none cathode band
Weight : 0.093 grams
TB0640H thru TB3500H
Bi-Directional
VDRM - 58 to 320 Volts
IPP - 100 Amperes
SMB
SMB
DIM. MIN. MAX.
A
A 4.06 4.57
B 3.30 3.94
B C C 1.96 2.21
D 0.15 0.31
E 5.21 5.59
G
H FD
E
F 0.05 0.20
G 2.01 2.62
H 0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS
CHARACTERISTICS
Non-repetitive peak impulse current @ 10/1000us
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
Junction temperature range
storage temperature range
THERMAL RESISTANCE
SYMBOL
IPP
ITSM
TJ
TSTG
CHARACTERISTICS
Junction to leads
Junction to ambient on print circuit (on recommended pad layout)
Typical positive temperature coefficient for brekdown voltage
SYMBOL
Rth(J-L)
Rth(J-A)
△ VBR/△ TJ
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
IPP (A)
500
400
250
200
160
100
100
50
0
tr
VALUE
100
50
-40 to +150
-55 to +150
VALUE
20
100
0.1
UNIT
A
A
℃
℃
UNIT
℃ /W
℃ /W
%/℃
Peak value (Ipp)
tr= rise time to peak value
tp= Decay time to half value
Half value
tp
TIME
REV. 1-PRE, 07-May-2001, KSWB04
Free Datasheet http://www.datasheet4u.com/
ELECTRICAL CHARACTERISTICS @ TA= 25℃ unless otherwise specified
TB0640H thru TB3500H
PARAMETER
RATED
REPETITIVE
OFF-STATE
VOLTAGE
OFF-STATE
LEAKAGE
CURRENT
@ VDRM
BREAKOVER
VOLTAGE
ON-STATE
VOLTAGE
@ IT=1.0A
BREAKOVER
CURRENT
HOLDING
CURRENT
OFF-STATE
CAPACITANCE
SYMBOL
UNITS
VDRM
Volts
IDRM
uA
VBO
Volts
VT
Volts
IBO- IBO+ IH- IH+
mA mA mA mA
Co
pF
LIMIT
Max
Max
Max
Max
Min Max
Min Max
Typ
TB0640H
58
5
77
3.5 50 800 150 800
200
TB0720H
65
5
88
3.5 50 800 150 800
200
TB0900H
75
5
98
3.5 50 800 150 800
200
TB1100H
90
5
130
3.5 50 800 150 800
120
TB1300H
120
5
160
3.5 50 800 150 800
120
TB1500H
140
5
180
3.5 50 800 150 800
120
TB1800H
160
5
220
3.5 50 800 150 800
120
TB2300H
190
5
265
3.5 50 800 150 800
80
TB2600H
220
5
300
3.5 50 800 150 800
80
TB3100H
275
5
350
3.5 50 800 150 800
80
TB3500H
320
5
400
3.5 50 800 150 800
80
SYMBOL
VDRM
IDRM
VBR
IBR
VBO
IBO
IH
VT
IPP
CO
PARAMETER
Stand-off Voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Note: 1
Off state capacitance
Note: 2
I
IPP
IBO
IH
IBR IDRM
VBR
V
VT
VDRM
VBO
REV. 1-PRE, 07-May-2001, KSWB04
NOTES: 1. IH > (VL/RL) If this criterion is not obeyed, the TSPD Triggers but does not return correctly to high-resistance state.
The Surge recovery time does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz; 1.0VRMS signal; VR=2VDC bias.
Free Datasheet http://www.datasheet4u.com/
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( liteon )
TB0900H thyristor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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