PGH2008AM 반도체 회로 부품 판매점
THYRISTOR MODULE
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 Nihon Inter Electronics Corporation |
THYRISTOR MODULE
200A / 800V
FEATURES
* Isolated Base
* 3 Phase Converter with Rush-Current
Controllable Thyristor
* High Surge Capability
* UL Recognized, File No. E187184
www.DataShTeeYt4PUI.cComAL APPLICATIONS
* Converter For UPS , VVVF and Servo
Motor Drive Amplifier
PGH2008AM
OUTLINE DRAWING
Approx Net Weight:530g
Pert of Diode Bridge and Thyristor
Maximum Ratings
Parameter
Average Rectified Output Current
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Case mounting
Mounting torque Terminals
Thermal Characteristics
IO(AV)
Tjw
Tstg
Viso
Ftor
Conditions
3 Phase Full Tc=93°C(Non-Bias)
Wave Rectified Tc=68°C(Biased)
Tj>125°C, Can not be Biased for Thyristor.
Base Plate to Terminals, AC1min.
Greased
M6 Screw
M6 Screw
M4 Screw
Max Rated
Value
200
-40 to +150
-40 to +125
2000
2.5 to 3.5
2.5 to 3.5
1.2 to 1.6
Unit
A
°C
°C
V
N•m
Characteristics
Thermal Resistance
Symbol
Test Conditions
Maximum Value. Unit
Rth(c-f) Case to Fin,Total,Greased
0.06
°C/W
Part of Diode Bridge (6 dies)
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage *1
Non Repetitive Peak Reverse Voltage *1
Symbol
VRRM
VRSM
Grade
PGH2008AM
800
900
Unit
V
Parameter
Surge Forward Current *1
I Squared t *1
Allowable Operating Frequancy
*1 Value Per 1 Arm
Symbol
Conditions
IFSM
50 Hz Half Sine Wave,1Pulse,
Non-Repetitive
I2t 2msec to 10msec
f
Max Rated
Value
1800
16200
400
Unit
A
A2s
Hz
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current *1
Peak Forward Voltage *1
Thermal Resistance
Part of Thyristor (1 die)
Symbol
Test Conditions
Maximum Value.
IRM VRM= VRRM, Tj= 125°C
VFM IFM= 200A, Tj=25°C
Rth(j-c) Junction to Case (Total)
20
1.20
0.10
*1 Value Per 1 Arm
Maximum Ratings
Parameter
www.DataSRheeept4eUti.ctiovme Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Symbol
VDRM
VDSM
VRRM
VRSM
Grade
PGH2008AM
800
900
800
900
Unit
mA
V
°C/W
Unit
V
V
Parameter
Surge On-State Current
I Squared t
Critical Rate of Turned-On Current
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
ITSM
I2t
di/dt
PGM
PG(AV)
IGM
VGM
VRGM
Conditions
50 Hz Half Sine Wave,1Pulse
Non-Repetitive
2msec to 10msec
VD=2/3VDRM, ITM=2•IO, Tj=125°C
IG=300mA, diG/dt=0.2A/µs
Max Rated
Value
3200
51200
100
5
1
2
10
5
Unit
A
A2s
A/µs
W
W
A
V
V
Electrical • Thermal Characteristics
Characteristics
Symbol
Test Conditions
Peak Off-State Current
Peak Reverse Current
Peak On-State Voltage
Gate Current to Trigger
Gate Voltage to Trigger
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State Voltage
Turn-Off Time
Turn-On Time
Delay Time
Rise Time
Latching Current
Holding Current
Thermal Resistance
IDM VDM= VDRM, Tj= 125°C
IRM VRM= VRRM, Tj= 125°C
VTM ITM= 200A, Tj=25°C
Tj=-40°C
IGT VD=6V,IT=1A Tj=25°C
Tj=125°C
Tj=-40°C
VGT VD=6V,IT=1A Tj=25°C
Tj=125°C
VGD VD=2/3VDRM Tj=125°C
dv/dt VD=2/3VDRM Tj=125°C
ITM=IO,VD=2/3VDRM
tq dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj=125°C
tgt
td
tr
VD=2/3VDRM Tj=125°C
IG=300mA, diG/dt=0.2A/µs
IL Tj=25°C
IH Tj=25°C
Rth(j-c) Junction to Case
Maximum Value.
Min. Typ. Max.
Unit
30 mA
30 mA
1.23 V
300
150 mA
80
5.0
3.0 V
2.0
0.25 V
500 V/µs
150 µs
6 µs
2 µs
4 µs
150 mA
100
0.25 °C/W
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제조업체: Nihon Inter Electronics Corporation
( nihon-inter )
PGH2008AM thyristor
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