MMT05A260T3 반도체 회로 부품 판매점
(MMT05A230T3 - MMT05A310T3) Thyristor Surge Protectors High Voltage Bidirectional TSPD
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 ON Semiconductor |
MMT05A230T3,
MMT05A260T3,
MMT05A310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
• High Surge Current Capability: 50 Amps 10 x 1000 μsec; for
Controlled Temperature Environments in the SMA package
• The MMT05A230T3 Series is used to help equipment meet various
regulatory requirements including: Telcordia 1089, ITU K.20 &
K.21, IEC 950 and FCC Part 68
• Bidirectional Protection in a Single Device
• Little Change of Voltage Limit with Transient Amplitude or Rate
• Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
• Fail−Safe, Shorts When Overstressed, Preventing Continued
www.DataSheet4U.com
Unprotected Operation
• Surface Mount Technology (SMT)
• Indicates UL Registered − File #E210057
• Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Off−State Voltage − Maximum
MMT05A230T3
MMT05A260T3
MMT05A310T3
VDM
"170
"200
"270
Volts
Maximum Pulse Surge Short Circuit
Current Non−Repetitive
Double Exponential Decay Waveform
(Notes 1 and 2)
8 x 20 msec
10 x 160 msec
10 x 560 msec
10 x 1000 msec
IPPS1
IPPS2
IPPS3
IPPS4
A(pk)
"150
"100
"70
"50
Maximum Non−Repetitive Rate of
Change of On−State Current Double
Exponential Waveform,
IPK = 50 A, PW = 15 ms
di/dt
"100
A/ms
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
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BIDIRECTIONAL TSPD
50 AMP SURGE
265 thru 365 VOLTS
MT1
MT2
SMA
(No Polarity)
CASE 403D
MARKING DIAGRAM
xxx
AYWWG
xxx = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 5
1
Publication Order Number:
MMT05A230T3/D
MMT05A230T3, MMT05A260T3, MMT05A310T3
THERMAL CHARACTERISTICS
Characteristic
Operating Temperature Range
Blocking or Conducting State
Overload Junction Temperature − Maximum Conducting State Only
Instantaneous Peak Power Dissipation (Ipk = 50A, 10x1000 μsec @ 25°C)
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
TJ1
TJ2
PPK
TL
Max
−40 to + 125
+ 175
2000
260
Unit
°C
°C
W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Symbol
Breakover Voltage (Both polarities)
(dv/dt = 100 V/μs, ISC = 1.0 A, Vdc = 1000 V)
(+65°C)
MMT05A230T3
MMT05A260T3
MMT05A310T3
MMT05A230T3
MMT05A260T3
MMT05A310T3
V(BO)
Breakover Voltage (Both polarities)
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms),
RI = 1.0 kΩ, t = 0.5 cycle) (Note 3)
(+65°C)
MMT05A230T3
MMT05A260T3
MMT05A310T3
MMT05A230T3
MMT05A260T3
MMT05A310T3
V(BO)
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I(BR) = 1.0 mA) Both polarities
MMT05A230T3
MMT05A260T3
MMT05A310T3
dV(BO)/dTJ
V(BR)
Off State Current (VD1 = 50 V) Both polarities
Off State Current (VD2 = VDM) Both polarities
On−State Voltage (IT = 1.0 A)
(PW ≤ 300 μs, Duty Cycle ≤ 2%) (Note 3)
ID1
ID2
VT
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ)
Both polarities
IBO
Holding Current (Both polarities)
(Note 3)
VS = 500 Volts; IT (Initiating Current) = "1.0 Amp
Critical Rate of Rise of Off−State Voltage
(Linear waveform, VD = Rated VBR, TJ = 25°C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V(rms) Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V(rms) Signal)
3. Measured under pulse conditions to reduce heating.
IH
dv/dt
CO
Min
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
150
2000
−
−
Typ
−
−
−
−
−
−
−
−
−
−
−
−
0.08
190
240
280
−
−
1.53
230
340
−
22
35
Max Unit
Volts
265
320
365
280
340
400
Volts
265
320
365
280
340
400
− %/°C
Volts
−
−
−
2.0 μA
5.0
3.0 Volts
− mA
− mA
− V/μs
− pF
50
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( onsemi )
MMT05A260T3 thyristor
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MMT05A260T3
(MMT05A230T3 - MMT05A310T3) Thyristor Surge Protectors High Voltage Bidirectional TSPD - ON Semiconductor
