MMT05B260T3 반도체 회로 부품 판매점
Thyristor Surge Protectors
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MMT05B230T3,
MMT05B260T3,
MMT05B310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
• High Surge Current Capability: 50 Amps 10 x 1000 µsec, for
Controlled Temperature Environments
• The MMT05B230T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
• Bidirectional Protection in a Single Device
• Little Change of Voltage Limit with Transient Amplitude or Rate
• Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
• Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
• Surface Mount Technology (SMT)
• Indicates UL Registered − File #E210057
• Device Marking: MMT05B230T3: RPBF; MMT05B260T3: RPBG;
MMT05B310T3: RPBJ, and Date Code
http://onsemi.com
BIDIRECTIONAL TSPD (
50 AMP SURGE
265 thru 365 VOLTS
)
MT1
MT2
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
MARKING DIAGRAMS
YWW
RPBx
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Off−State Voltage − Maximum
MMT05B230T3
MMT05B260T3
MMT05B310T3
VDM
"170
"200
"270
Maximum Pulse Surge Short Circuit
Current Non−Repetitive
Double Exponential Decay Waveform
(Notes 1. and 2.)
(−25°C Initial Temperature)
8 x 20 µsec
10 x 160 µsec
10 x 560 µsec
10 x 1000 µsec
IPPS1
IPPS2
IPPS3
IPPS4
Maximum Non−Repetitive Rate of
Change of On−State Current
Double Exponential Waveform,
R = 1.0, L = 1.5 µH, C = 1.67 µF,
Ipk = 110A
di/dt
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
"150
"100
"70
"50
"150
Unit
Volts
A(pk)
A/µs
RPBx
x
Y
WW
= Specific Device Code
= F, G or J
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
MMT05B230T3 SMB
12mm Tape and Reel
(2.5K/Reel)
MMT05B260T3 SMB
12mm Tape and Reel
(2.5K/Reel)
MMT05B310T3
SMB
12mm Tape and Reel
(2.5K/Reel)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 7
1
Publication Order Number:
MMT05B230T3/D
MMT05B230T3, MMT05B260T3, MMT05B310T3
THERMAL CHARACTERISTICS
Characteristic
Operating Temperature Range
Blocking or Conducting State
Overload Junction Temperature − Maximum Conducting State Only
Instantaneous Peak Power Dissipation (Ipk = 50 A, 10x1000 µsec @ 25°C)
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
TJ1
TJ2
PPK
TL
Max
−40 to + 125
+ 175
2000
260
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Symbol
Breakover Voltage (Both polarities)
(dv/dt = 100 V/µs, ISC = 1.0 A, Vdc = 1000 V)
(+65°C)
MMT05B230T3
MMT05B260T3
MMT05B310T3
MMT05B230T3
MMT05B260T3
MMT05B310T3
V(BO)
Breakover Voltage (Both polarities)
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms),
RI = 1.0 kΩ, t = 0.5 cycle) (Note 3.)
(+65°C)
MMT05B230T3
MMT05B260T3
MMT05B310T3
MMT05B230T3
MMT05B260T3
MMT05B310T3
V(BO)
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I(BR) = 1.0 mA) Both polarities
MMT05B230T3
MMT05B260T3
MMT05B310T3
dV(BO)/dTJ
V(BR)
Off State Current (VD1 = 50 V) Both polarities
Off State Current (VD2 = VDM) Both polarities
On−State Voltage (IT = 1.0 A)
(PW ≤ 300 µs, Duty Cycle ≤ 2%) (Note 3.)
ID1
ID2
VT
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ)
Both polarities
IBO
Holding Current (Both polarities)
VS = 500 Volts; IT (Initiating Current) = "1.0 Amp
(Note 3.)
Critical Rate of Rise of Off−State Voltage
(Linear waveform, VD = Rated VBR, TJ = 25°C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal)
3. Measured under pulse conditions to reduce heating.
IH
dv/dt
CO
Min Typ
−−
−−
−−
−−
−−
−−
−−
−−
−−
−−
−−
−−
− 0.08
− 190
− 240
− 280
−−
−−
− 1.53
− 230
150 340
2000
−
− 22
− 53
Max
265
320
365
280
340
400
265
320
365
280
340
400
−
−
−
−
2.0
5.0
3.0
−
−
−
−
75
Unit
°C
°C
W
°C
Unit
Volts
Volts
%/°C
Volts
µA
Volts
mA
mA
V/µs
pF
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MMT05B260T3 thyristor
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