MCR265-10 반도체 회로 부품 판매점
Thyristors
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 Motorola Semiconductors |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Thyristors
Silicon Controlled Rectifiers
. . . designed for inverse parallel SCR output devices for solid state relays, welders,
battery chargers, motor controls or applications requiring high surge operation.
• Photo Glass Passivated Blocking Junctions for High Temperature Stability,
Center Gate for Uniform Parameters
• 550 Amperes Surge Capability
• Blocking Voltage to 800 Volts
Order this document
by MCR265-2/D
MCR265-2
thru
MCR265-10
SCRs
55 AMPERES RMS
50 thru 800 VOLTS
G
AK
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 125°C, Gate Open)
MCR265-2
MCR265-4
MCR265-6
MCR265-8
MCR265-10
Symbol
VDRM
VRRM
Value
50
200
400
600
800
Unit
Volts
Forward Current (TC = 70°C)
(All Conduction Angles)
Peak Non-repetitive Surge Current — 8.3 ms
(1/2 Cycle, Sine Wave)
IT(RMS)
IT(AV)
ITSM
55
35
550
Amps
Amps
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
(300 µs, 120 PPS)
PGM
PG(AV)
IGM
20
0.5
2
Watts
Watt
Amps
Operating Junction Temperature Range
TJ –40 to +125 °C
Storage Temperature Range
Tstg –40 to +150
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when
the device is to be used at high sustained currents.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1
MCR265-2 thru MCR265-10
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 0.9 °C/W
Thermal Resistance, Junction to Ambient
RθJA 60 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Typ Max Unit
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
Forward “On” Voltage(1)
(ITM = 110 A)
TJ = 25°C
TJ = 125°C
Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
(TC = –40°C)
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage
(Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C)
Holding Current
(Anode Voltage = 12 Vdc, Gate Open)
IDRM, IRRM
— — 10 µA
——
2 mA
VTM
— 1.5 1.9 Volts
IGT
VGT
mA
— 20 50
— 40 90
— 1 1.5 Volts
VGD
0.2 —
— Volts
IH — 30 75 mA
Turn-On Time
(ITM = 55 A, IGT = 200 mAdc)
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
p p1. Pulse Width 300 µs, Duty Cycle 2%.
tgt
dv/dt
— 1.5 — µs
— 50 — V/µs
FIGURE 1 — AVERAGE CURRENT DERATING
125
121
117
113 α
109 α = CONDUCTION ANGLE
105
101 α = 30°
97
93
89 dc
85
81
77
73
60° 90°
180°
69
0 4.0 8.0 12 16 20 24 28 32 36 40
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION
60
54 180°
90°
48 60°
42
36 dc
30
24 α = 30°
18
12 α
6.0 α = CONDUCTION ANGLE
0
0 5.0 10 15 20 25 30 35 40
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)*
2 Motorola Thyristor Device Data
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