MCR264-4 반도체 회로 부품 판매점
Thyristors
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 Motorola Semiconductors |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Thyristors
Silicon Controlled Rectifiers
. . . designed for back-to-back SCR output devices for solid state relays or applications
requiring high surge operation.
• Photo Glass Passivated Blocking Junctions for High Temperature Stability,
Center Gate for Uniform Parameters
• 400 Amperes Surge Capability
• Blocking Voltage to 800 Volts
Order this document
by MCR264-4/D
MCR264Ć4
thru
MCR264Ć10
SCRs
40 AMPERES RMS
200 thru 800 VOLTS
G
AK
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 125°C, Gate Open)
MCR264-4
MCR264-6
MCR264-8
MCR264-10
Symbol
VDRM
VRRM
Value
200
400
600
800
Unit
Volts
Forward Current (TC = 80°C)
(All Conduction Angles)
Peak Non-repetitive Surge Current – 8.3 ms
(1/2 Cycle, Sine Wave)
1.5 ms
IT(RMS)
IT(AV)
ITSM
40
25
400
450
Amps
Amps
Forward Peak Gate Power
Forward Average Gate Power
Forward Peak Gate Current
(300 µs, 120 PPS)
PGM
PG(AV)
IGM
20
0.5
2
Watts
Watt
Amps
Operating Junction Temperature Range
TJ –40 to +125 °C
Storage Temperature Range
Tstg –40 to +150
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when
the device is to be used at high sustained currents.
REV 1
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1
MCR264Ć4 thru MCR264Ć10
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 1 °C/W
Thermal Resistance, Junction to Ambient
RθJA 60 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Typ Max Unit
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
Forward “On” Voltage(1)
(ITM = 80 A)
TJ = 25°C
TJ = 125°C
Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms, TC = – 40°C)
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage
(Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C)
Holding Current
(Anode Voltage = 12 Vdc)
IDRM, IRRM
— — 10 µA
——
2 mA
VTM
— 1.4
2 Volts
IGT
VGT
— 15 50 mA
— 30 90
— 1 1.5 Volts
VGD
0.2 —
— Volts
IH — 30 60 mA
Turn-On Time
(ITM = 40 A, IGT = 60 mAdc)
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
p p1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
tgt
dv/dt
— 1.5 — µs
— 50 — V/µs
FIGURE 1 — AVERAGE CURRENT DERATING
125
115
105
95
85
75
0
α
α = CONDUCTION ANGLE
dc
α = 30°
60°
90°
5.0 10 15 20
IT(AV), ON-STATE FORWARD CURRENT (AMPS)
180°
25
FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION
50
45 180°
40
90°
35 60°
30 α = 30°
dc
25
20
15
10 α
5.0 α = CONDUCTIVE ANGLE
0
0 5.0 10 15 20 25
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
2 Motorola Thyristor Device Data
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