CMA30E1600PB 반도체 회로 부품 판매점
Thyristor
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 IXYS |
Thyristor
Single Thyristor
Part number
CMA30E1600PB
CMA30E1600PB
VRRM = 1600 V
I TAV
=
30 A
VT = 1.42 V
21
3
Backside: anode
Features / Advantages:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
Applications:
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Package: TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
CMA30E1600PB
Thyristor
Ratings
Symbol
VRSM/DSM
VRRM/DRM
I R/D
VT
I TAV
I T(RMS)
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt)cr
(dv/dt)cr
VGT
IGT
VGD
IGD
IL
IH
t gd
tq
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VR/D = 1600 V
VR/D = 1600 V
forward voltage drop
IT = 30 A
I T = 60 A
IT = 30 A
I T = 60 A
average forward current
TC = 115°C
RMS forward current
180° sine
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
min.
TVJ = 125 °C
TVJ = 150°C
TVJ = 150°C
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
turn-off time
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V
tP = 30 µs
tP = 300 µs
f = 1 MHz
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
TC = 150°C
TVJ = 125 °C; f = 50 Hz
repetitive, IT = 90 A
tP = 200 µs; diG /dt = 0.2 A/µs;
IG = 0.2 A; V = ⅔ VDRM
non-repet., IT = 30 A
V = ⅔ VDRM
TVJ = 125°C
R GK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = ⅔ VDRM
TVJ = 150°C
t p = 10 µs
TVJ = 25 °C
IG = 0.2 A; diG/dt = 0.2 A/µs
VD = 6 V RGK = ∞
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 0.5 A; diG/dt = 0.5 A/µs
VR = 100 V; IT = 30 A; V = ⅔ VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs
typ. max. Unit
1700 V
1600 V
10 µA
2 mA
1.42 V
1.80 V
1.42 V
1.92 V
30 A
47 A
0.90 V
17 mΩ
0.5 K/W
0.50 K/W
250 W
260 A
280 A
220 A
240 A
340 A²s
325 A²s
240 A²s
240 A²s
13 pF
10 W
5W
0.5 W
150 A/µs
500 A/µs
500 V/µs
1.3 V
1.6 V
28 mA
50 mA
0.2 V
1 mA
90 mA
60 mA
2 µs
150 µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2015 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20150827b
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CMA30E1600PB thyristor
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