2N6160 반도체 회로 부품 판매점
THYRISTORS
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 Digitron Semiconductors |
2N6157-2N6165
High-reliability discrete products
and engineering services since 1977
THYRISTORS
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage
(TJ = -65 to +125°C)
(1/2 sine wave 50 to 60Hz, gate open)
2N6157, 2N6160, 2N6163
2N6158, 2N6161, 2N6164
2N6159, 2N6162, 2N6165
Peak gate voltage
RMS on-state current (full sine wave, 50 to 60Hz)
(TC = -65 to +85°C)
(TC = 100°C)
Peak non-repetitive surge current
(1 cycle, sine wave, 60 Hz preceded and followed by a 30A RMS current, TC = 85°C)
Circuit fusing considerations (t = 8.3ms)
Peak gate power
(TJ = 80°C, pulse width = 2µs)
Average gate power
(TJ = 80°C, t = 8.3ms)
Peak gate current
Operating junction temperature range
Storage temperature range
Stud torque
Symbol
Value
VDRM
VGM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
TJ
Tstg
200
400
600
10
30
20
250
260
20
0.5
2.0
-65 to +125
-65 to +150
30
Unit
Volts
Volts
Amps
Amps
A2s
Watts
Watts
Amps
°C
°C
In. lb.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Symbol
RӨJC
Maximum
1
Unit
°C/W
Rev. 20130131
2N6157-2N6165
High-reliability discrete products
and engineering services since 1977
THYRISTORS
ELECTRICAL CHARACTERISTICS @ 25°C unless otherwise noted
Characteristic
Peak forward or reverse blocking current
(Rated VDRM or VRRM @ TJ = 25°C)
(Rated VDRM or VRRM @ TJ = 125°C)
Peak on-state voltage (either direction)
(ITM = 42A peak, pulse width = 1 to 2 ms, duty cycle ≤ 2%)
Gate trigger current (continuous dc)(1)
(Main terminal voltage = 12V, RL = 50Ω)
MT2(+),G(+)
MT2(+),G(-)
MT2(-),G(-)
MT2(-),G(+)
MT2(+),G(+); MT2(-), G(-) TC = -65°C
MT2(+),G(-); MT2(-), G(+) TC = -65°C
Gate trigger voltage (continuous dc)
(Main terminal voltage = 12V, RL = 50Ω)
MT2(+),G(+)
MT2(+),G(-)
MT2(-),G(-)
MT2(-),G(+)
All quadrants
Main terminal voltage = rated VDRM, RL = 10kΩ, T J = 125°C
Holding current
(Main terminal voltage = 12V, gate open)
(initiating current = 500mA)
MT2(+)
MT2(-)
Either direction, TC = -65°C
Turn on time
(Main terminal voltage = rated VDRM, ITM = 42A, gate source voltage = 12V,
RS = 50Ω, rise time = 0.1µs, pulse width = 2µs)
Blocking voltage application rate at commutation,
f = 60Hz, TC = 85°C
On state conditions:
(ITM = 42A, pulse width = 4ms, di/dt = 17.5A/ms)
Off-state conditions:
(Main terminal voltage = rated VDRM, 200µs min., gate source voltage = 0V, RS = 50Ω)
Symbol Min Typ. Max
IDRM, IRRM
VTM
-
-
-
- 10
-2
1.5 2.0
- 15 60
IGT
- 20 70
- 20 70
- 30 100
- - 200
- - 250
- 0.8 2
VGT
- 0.7 2.1
- 0.85 2.1
- 1.1 2.5
- - 3.4
0.2 -
-
IH - 8 70
- 10 80
- - 200
tgt - 1 2
dv/dt(c)
-
5
-
Unit
µA
mA
Volts
mA
Volts
mA
µs
V/µs
Rev. 20130131
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제조업체: Digitron Semiconductors
( digitrons )
2N6160 thyristor
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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