S9972 반도체 회로 부품 판매점
(S9972 / S9973) CCD area image sensor
|
|
 Hamamatsu Corporation |
IMAGE SENSOR
CCD areawww.DataSheet4U.com image sensor
S9972/S9973 series
Front-illuminated FFT-CCD, high IR sensitivity
S9972/S9973 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using
the binning operation, S9972/S9973 series can be used as a linear image sensor having a long aperture in the direction of the device length. This
makes S9972/S9973 series ideally suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal
processing speed compared with conventional methods by which signals are digitally added by an external circuit. S9972/S9973 series also
feature low noise and low dark signal (MPP mode operation). This enables low-light-level detection and long integration time, thus achieving a
wide dynamic range.
S9972/S9973 series have an effective pixel size of 24 × 24 µm and are available in image areas of 24.576 (H) × 2.976 (V) mm2 (1024 × 124
pixels) and 24.576 (H) × 6.048 (V) mm2 (1024 × 252 pixels). S9972/S9973 series are pin compatible with S9970/S9971 series. (Operating
conditions and characteristics are a little bit different from S9970/S9971 series.)
Features
l 1024 (H) × 124 (V) and 1024 (H) × 252 (V) pixel format
l Pixel size: 24 × 24 µm
l Line/pixel binning
l 100 % fill factor
l Wide dynamic range
l Low dark signal
l Low readout noise
l MPP operation
l High IR sensitivity
Applications
l Fluorescence spectrometer, ICP
l Raman spectrometer
l Industrial inspection requiring
l Semiconductor inspection
l DNA sequencer
l Low-light-level detection
s Selection guide
Type No.
S9972-1007
S9972-1008
S9973-1007
S9973-1008
Cooling
Non-cooled
One-stage
TE-cooled
Number of total pixels
1044 × 128
1044 × 256
1044 × 128
1044 × 256
Number of active pixels
1024 × 124
1024 × 252
1024 × 124
1024 × 252
Active area
[mm (H) × mm (V)]
24.576 × 2.976
24.576 × 6.048
24.576 × 2.976
24.576 × 6.048
s General ratings
Parameter
Specification
Pixel size
24 (H) × 24 (V) µm
Vertical clock phase
2 phase
Horizontal clock phase
2 phase
Output circuit
One-stage MOSFET source follower
Package
24 pin ceramic DIP (refer to dimensional outlines)
Window *1
S9972 series: quartz glass
S9973 series: sapphire glass
*1: Temporary window type and UV coat type are available upon request.
(Temporary window is fixed by tape to protect the CCD chip and wire bonding.)
Temporary window type: expressed by “N” ex. S9972-1007N
UV coat type: expressed by “UV” ex. S9972-1007UV
PRELIMINARY DATA
Nov. 2005
1
CCD area image sensor S9972/S9973 series
s Absolute maximum ratings (Ta=25 °C)
www.DataSheet4U.cPoamrameter
Operating temperature
Storage temperature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Symbol
Topr
Tstg
VOD
VRD
VISV
VISH
VIG1V, VIG2V
VIG1H, VIG2H
VSG
VOG
VRG
VTG
VP1V, VP2V
VP1H, VP2H
Min.
-50
-50
-0.5
-0.5
-0.5
-0.5
-15
-15
-15
-15
-15
-15
-15
-15
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
s Operating conditions (MPP mode, Ta=25 °C)
Parameter
Symbol
Output transistor drain voltage
VOD
Reset drain voltage
VRD
Output gate voltage
VOG
Substrate voltage
VSS
Test point (vertical input source)
VISV
Test point (horizontal input source)
VISH
Test point (vertical input gate)
VIG1V, VIG2V
Test point (horizontal input gate)
VIG1H, VIG2H
Vertical shift register
High
VP1VH, VP2VH
clock voltage
Low
VP1VL, VP2VL
Horizontal shift register
High
VP1HH, VP2HH
clock voltage
Low
VP1HL, VP2HL
Summing gate voltage
High
Low
VSGH
VSGL
Reset gate voltage
High
Low
VRGH
VRGL
Transfer gate voltage
High
Low
VTGH
VTGL
Min.
18
12
-0.5
-
-
-
-8
-8
0
-9
0
-9
0
-9
0
-9
0
-9
Typ.
20
13
0
0
VRD
VRD
0
0
4
-8
4
-8
4
-8
4
-8
4
-8
s Electrical characteristics (Ta=25 °C)
Parameter
Symbol
Remark
Min.
Signal output frequency
fc - -
Vertical shift register
capacitance
S9972/S9973-1007
S9972/S9973-1008
CP1V, CP2V
-
-
-
-
Horizontal shift register capacitance
CP1H, CP2H
-
-
Summing gate capacitance
CSG
--
Reset gate capacitance
CRG
--
Transfer gate capacitance
CTG
--
Transfer efficiency
CTE
*2 0.99995
DC output level
Vout
*3 12
Output impedance
Zo *3 -
Power dissipation
P
*3, *4
-
*2: Charge transfer efficiency per pixel, measured at half of the full well capacity.
*3: The values depend on the load resistance. (VOD=20 V, Load resistance=10 kΩ)
*4: Power dissipation of the on-chip amplifier.
Typ.
0.1
1600
3200
180
7
7
100
0.99999
15
3
15
Max.
+30
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Max.
22
14
2
-
-
-
-
-
6
-7
6
-7
6
-7
6
-7
6
-7
Max.
1
-
-
-
18
-
-
Unit
°C
°C
V
V
V
V
V
V
V
V
V
V
V
V
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
Unit
MHz
pF
pF
pF
pF
pF
-
V
kΩ
mW
2
|
PDF 파일 내의 페이지 : 총 9 페이지
제조업체: Hamamatsu Corporation
( hamamatsu )
S9972 sensor
데이터시트 다운로드 :
[ S9972.PDF ]
[ S9972 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
S9970
(S9970 / S9971) CCD area image sensor - Hamamatsu Corporation
S9971
(S9970 / S9971) CCD area image sensor - Hamamatsu Corporation
S9972
(S9972 / S9973) CCD area image sensor - Hamamatsu Corporation
S9973
(S9972 / S9973) CCD area image sensor - Hamamatsu Corporation
S9978
CCD area image sensor - Hamamatsu Corporation
S9979
CCD area image sensor - Hamamatsu Corporation