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D Integral Visible Light Cutoff Filter
D Monolithic Silicon IC Containing
Photodiode, Operational Amplifier, and
Feedback Components
D Converts Light Intensity to Output Voltage
D High Irradiance Responsivity Typically
42 mV/(µW/cm2) at λp = 940 nm (TSL260)
D Low Dark (Offset) Voltage . . . 10 mV
Max at 25°C, VDD = 5 V
D Single-Supply Operation
D Wide Supply Voltage Range . . . 3 V to 9 V
D Low Supply Current . . . 800 µA Typical at
VDD = 5 V
D Advanced Linear CMOS Technology
TSL260, TSL261, TSL262
IR LIGHTĆTOĆVOLTAGE OPTICAL SENSORS
PACKAGE
(FRONT VIEW)
TAOS021 – MAY 2000
123
GND VDD OUT
Description
The TSL260, TSL261, and TSL262 are light-to-voltage optical sensors, each combining a photodiode and a
transimpedance amplifier (feedback resistor = 16 MΩ, 8 MΩ, and 2 MΩ, respectively) on a single monolithic
integrated circuit. The output voltage is directly proportional to the infrared light intensity (irradiance) on the
photodiode. The TSL260, TSL261, and TSL262 are manufactured using advanced linear CMOS silicon-gate
technology, which provides good amplifier offset-voltage stability and low power consumption.
Functional Block Diagram
– Voltage
+ Output
Terminal Functions
TERMINAL
NAME NO.
GND
1
OUT
3
VDD
2
DESCRIPTION
Ground (substrate). All voltages are referenced to GND.
Output voltage
Supply voltage
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Texas Advant ced Optoelectronic Solutions Inc.
800 Jupiter Road, Suite 205 S Plano, TX 75074 S (972) 673-0759
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Copyright E 2000, TAOS Inc.
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TSL260, TSL261, TSL262
IR LIGHTĆTOĆVOLTAGE OPTICAL SENSORS
TAOS021 – MAY 2000
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 V
Output current, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10 mA
Duration of short-circuit current at (or below) 25°C (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 s
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to 85°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25°C to 85°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
NOTES: 1. All voltages are with respect to GND.
2. Output may be shorted to either supply.
Recommended Operating Conditions
Supply voltage, VDD
Operating free-air temperature, TA
MIN NOM MAX UNIT
3 5 9V
0 70 °C
Electrical Characteristics at VDD = 5 V, TA = 25°C, λp = 940 nm, RL = 10 kΩ (unless otherwise noted)
(see Note 3)
VDARK
VOM
VO
Ne
PARAMETER
TEST
CONDITIONS
Dark voltage
Maximum output
Output voltage
Temperature coefficient
of output voltage (VO)
Irradiance responsivity
Ee = 0
Ee = 2.6 mW/cm2
Ee = 48 µW/cm2
Ee = 87 µW/cm2
Ee = 525 µW/cm2
Ee = 48 µW/cm2,
TA = 0°C to 70°C
Ee = 87 µW/cm2,
TA = 0°C to 70°C
Ee = 525 µW/cm2,
TA = 0°C to 70°C
See Note 4
Ee = 48 µW/cm2,
No load
TSL260
MIN TYP MAX
3 10
3.1 3.5
1 23
TSL261
MIN TYP MAX
3 10
3.1 3.5
123
±1
±1
42
900 1600
23
IDD Supply current
Ee = 87 µW/cm2,
No load
900 1600
Ee = 525 µW/cm2,
No load
NOTES: 3. The input irradiance Ee is supplied by a GaAs infrared-emitting diode with λp = 940 nm.
4. Irradiance responsivity is characterized over the range VO = 0.05 to 3 V.
TSL262
MIN TYP MAX
3 10
3.1 3.5
UNIT
mV
V
123
V
mV/°C
±1
3.8 mV/(µW/cm2)
900 1600
µA
Operating Characteristics at TA = 25°C (see Figure 1)
PARAMETER
TEST CONDITIONS
TSL260
MIN TYP MAX
tr Output pulse rise time VDD = 5 V, λp = 940 nm
tf Output pulse fall time VDD = 5 V, λp = 940 nm
Vn Output noise voltage VDD = 5 V, f = 20 Hz
360
360
0.6
TSL261
MIN TYP MAX
90
90
0.5
TSL262
UNIT
MIN TYP MAX
7 µs
7 µs
0.4 µV/√Hz
Copyright E 2000, TAOS Inc.
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