BZX84C20ET1G 반도체 회로 부품 판매점
Zener Voltage Regulators
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 ON Semiconductor |
BZX84CxxxET1G Series,
SZBZX84CxxxET1G Series
Zener Voltage Regulators
250 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features
• 250 mW Rating on FR−4 or FR−5 Board
• Zener Breakdown Voltage Range − 2.4 V to 75 V
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
• ESD Rating of Class 3 (> 16 kV) per Human Body Model
• Peak Power − 225 W (8 X 20 ms)
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
MAXIMUM RATINGS
Rating
Symbol Max
Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL ≤ 25°C
Total Power Dissipation on FR−5 Board,
(Note 2) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 3) @ TA = 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Ppk 225 W
PD
RqJA
PD
RqJA
TJ, Tstg
250
2.0
500
300
2.4
417
−65 to
+150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
www.onsemi.com
SOT−23
CASE 318
STYLE 8
3
Cathode
1
Anode
MARKING DIAGRAM
xxx M G
G
1
xxx = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BZX84CxxxET1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SZBZX84CxxxET1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
BZX84CxxxET3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
SZBZX84CxxxET3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2003
October, 2016 − Rev. 10
1
Publication Order Number:
BZX84C2V4ET1/D
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C
unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)
Symbol
Parameter
VZ
IZT
ZZT
IR
VR
IF
VF
QVZ
C
Reverse Zener Voltage @ IZT
Reverse Current
Maximum Zener Impedance @ IZT
Reverse Leakage Current @ VR
Reverse Voltage
Forward Current
Forward Voltage @ IF
Maximum Temperature Coefficient of VZ
Max. Capacitance @ VR = 0 and f = 1 MHz
I
IF
VZ VR
IIRZT VF
Zener Voltage Regulator
V
www.onsemi.com
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