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MB3035S 반도체 회로 부품 판매점

Schottky Barrier Rectifier ( Diode )



Vishay 로고
Vishay
MB3035S 데이터시트, 핀배열, 회로
www.vishay.com
M(B,I)3035S, M(B,I)3045S
Vishay General Semiconductor
Schottky Barrier Rectifier
TO-220AB
TO-263AB
K
M30xxS
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-262AA
K
A
NC
MB30xxS
NC K
A HEATSINK
MI30xxS
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 30 A
TJ max.
30 A
35 V, 45 V
200 A
0.61 V
150 °C
FEATURES
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s per
JESD22-B106 (for TO-220AB and TO-262AA package)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig.1)
VRRM
IF(AV)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
Peak repetitive reverse current at tp = 2.0 µs, 1 kHz
Voltage rate of change (rated VR)
IRRM
dV/dt
Operating junction and storage temperature range
TJ
TSTG
M(B,I)3035S
M(B,I)3045S
35 45
30
200
2.0
10 000
- 65 to + 150
- 65 to + 175
UNIT
V
A
A
V/μs
°C
Revision: 15-Oct-12
1 Document Number: 88952
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


MB3035S 데이터시트, 핀배열, 회로
www.vishay.com
M(B,I)3035S, M(B,I)3045S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum instantaneous forward voltage
VF (1)
Maximum instantaneous reverse current at DC
blocking voltage
Typical junction capacitance
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
IR (2)
CJ
IF = 15 A
IF = 30 A
TJ = 25 °C
IF = 15 A
IF = 30 A
TJ = 125 °C
Rated VR
TJ = 25 °C
TJ = 125 °C
4.0 V, 1 MHz
TYP.
MAX.
0.54 -
0.65 0.70
0.46 -
0.61 0.66
40 200
26 55
980
UNIT
V
μA
mA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M30xxS
MB30xxS
Typical thermal resistance
RJC
2.0
MI30xxS
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
M3045S-E3/4W
1.878
TO-263AB
MB3045S-E3/4W
1.37
TO-263AB
MB3045S-E3/8W
1.37
TO-263AA
MI3045S-E3/4W
1.454
PACKAGE CODE
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
M(B,I)30xxS
30
25
M30xxS
20
15
10
5
0
0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
300
TJ = TJ Max.
250 8.3 ms Single Half Sine-Wave
200
150
100
50
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Revision: 15-Oct-12
2 Document Number: 88952
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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Schottky Barrier Rectifier ( Diode ) - Vishay